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TGA1141 Datasheet, Equivalent, Power Amplifier.

33-36 GHz 2W Power Amplifier

33-36 GHz 2W Power Amplifier

 

 

 

Part TGA1141
Description 33-36 GHz 2W Power Amplifier
Feature Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features
• 0.
25 um pHEMT Technol ogy
• 17 dB Nominal Gain
• 31 dBm P out @ P1dB,
• Psat 33dBm @ 6V , 34dBm @7V
• Bias 6 - 7V @ 1.
5A Primary App lications
• Military Radar Systems Ka Band Sat-Com
• Point-to-Point Ra dio Chip Dimensions 4.
13 mm x 3.
3 mm ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 20 Small-signal Gain (dB) 1 8 Performance Summary Table Descriptio n Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35.
2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35.
2 GHz ~ 5 dB .
Manufacture TriQuint Semiconductor
Datasheet
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Part TGA1141
Description 33-36 GHz 2W Power Amplifier
Feature Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features
• 0.
25 um pHEMT Technol ogy
• 17 dB Nominal Gain
• 31 dBm P out @ P1dB,
• Psat 33dBm @ 6V , 34dBm @7V
• Bias 6 - 7V @ 1.
5A Primary App lications
• Military Radar Systems Ka Band Sat-Com
• Point-to-Point Ra dio Chip Dimensions 4.
13 mm x 3.
3 mm ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 20 Small-signal Gain (dB) 1 8 Performance Summary Table Descriptio n Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35.
2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35.
2 GHz ~ 5 dB .
Manufacture TriQuint Semiconductor
Datasheet
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