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TGA1141 Datasheet, Equivalent, Power Amplifier.33-36 GHz 2W Power Amplifier 33-36 GHz 2W Power Amplifier |
　
　
　
| Part | TGA1141 |
|---|---|
| Description | 33-36 GHz 2W Power Amplifier |
| Feature | Advance Product Information
Feb 4, 2000
33-36 GHz 2W Power Amplifier
TGA1141
Key Features • 0. 25 um pHEMT Technol ogy • 17 dB Nominal Gain • 31 dBm P out @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1. 5A Primary App lications • Military Radar Systems †¢ Ka Band Sat-Com • Point-to-Point Ra dio Chip Dimensions 4. 13 mm x 3. 3 mm ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 20 Small-signal Gain (dB) 1 8 Performance Summary Table Descriptio n Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35. 2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35. 2 GHz ~ 5 dB . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
| Part | TGA1141 |
|---|---|
| Description | 33-36 GHz 2W Power Amplifier |
| Feature | Advance Product Information
Feb 4, 2000
33-36 GHz 2W Power Amplifier
TGA1141
Key Features • 0. 25 um pHEMT Technol ogy • 17 dB Nominal Gain • 31 dBm P out @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1. 5A Primary App lications • Military Radar Systems †¢ Ka Band Sat-Com • Point-to-Point Ra dio Chip Dimensions 4. 13 mm x 3. 3 mm ( ) Wafer Lot 9918802-1, -2, -3, +6V, ~ 880mA 22 20 Small-signal Gain (dB) 1 8 Performance Summary Table Descriptio n Performance Evaluation Fixtured with Flare TFNs 33 to 36 GHz > 17 dB nom, 34 - 35. 2 GHz > 17 dB nom, 33 - 36 GHz ~ 5 dB nom, 34 - 35. 2 GHz ~ 5 dB . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
　
　
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