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TGA1172 Datasheet, Equivalent, Power Amplifier.

27 - 32 GHz 1W Power Amplifier

27 - 32 GHz 1W Power Amplifier

 

 

 

Part TGA1172
Description 27 - 32 GHz 1W Power Amplifier
Feature Advance Product Information March 21, 20 00 27 - 32 GHz 1W Power Amplifier TGA 1172 Key Features
• 0.
25 um pHEMT Te chnology
• 18 dB Gain at 28 GHz
• 2 9 dBm Nominal P1dB
• 37dBm OTOI typic al at 28GHz
• Input/Output RL < -10 d B
• Bias 6 - 7V @ 630 mA Chip Dimensi ons 2.
69 mm x 1.
37 mm Small Signal Gain 15 10 Return g Loss (dB) ( ) 25 Prim ary Applications
• Point-to-Point Rad io
• Point-to-Multipoint Communicatio ns
• Ka Band Sat-Com Vd1 Vg2 Vd2 Vg3 RF OUT Vd3 6V, 630 mA 5 0 -5 -10 -15 -20 10 15 S11 S21 15 5 Gain (dB) -5 -15 -25 S22 20 25 30 35 -35 -45 40 RF IN 600µm 1200µm 2400µm Vg1 V .
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1172 Datasheet
Part TGA1172
Description 27 - 32 GHz 1W Power Amplifier
Feature Advance Product Information March 21, 20 00 27 - 32 GHz 1W Power Amplifier TGA 1172 Key Features
• 0.
25 um pHEMT Te chnology
• 18 dB Gain at 28 GHz
• 2 9 dBm Nominal P1dB
• 37dBm OTOI typic al at 28GHz
• Input/Output RL < -10 d B
• Bias 6 - 7V @ 630 mA Chip Dimensi ons 2.
69 mm x 1.
37 mm Small Signal Gain 15 10 Return g Loss (dB) ( ) 25 Prim ary Applications
• Point-to-Point Rad io
• Point-to-Multipoint Communicatio ns
• Ka Band Sat-Com Vd1 Vg2 Vd2 Vg3 RF OUT Vd3 6V, 630 mA 5 0 -5 -10 -15 -20 10 15 S11 S21 15 5 Gain (dB) -5 -15 -25 S22 20 25 30 35 -35 -45 40 RF IN 600µm 1200µm 2400µm Vg1 V .
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1172 Datasheet

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