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TGA1172 Datasheet, Equivalent, Power Amplifier.27 - 32 GHz 1W Power Amplifier 27 - 32 GHz 1W Power Amplifier |
| Part | TGA1172 |
|---|---|
| Description | 27 - 32 GHz 1W Power Amplifier |
| Feature | Advance Product Information
March 21, 20 00
27 - 32 GHz 1W Power Amplifier
TGA 1172
Key Features • 0. 25 um pHEMT Te chnology • 18 dB Gain at 28 GHz • 2 9 dBm Nominal P1dB • 37dBm OTOI typic al at 28GHz • Input/Output RL < -10 d B • Bias 6 - 7V @ 630 mA Chip Dimensi ons 2. 69 mm x 1. 37 mm Small Signal Gain 15 10 Return g Loss (dB) ( ) 25 Prim ary Applications • Point-to-Point Rad io • Point-to-Multipoint Communicatio ns • Ka Band Sat-Com Vd1 Vg2 Vd2 Vg3 RF OUT Vd3 6V, 630 mA 5 0 -5 -10 -15 -20 10 15 S11 S21 15 5 Gain (dB) -5 -15 -25 S22 20 25 30 35 -35 -45 40 RF IN 600µm 1200µm 2400µm Vg1 V . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
| Part | TGA1172 |
|---|---|
| Description | 27 - 32 GHz 1W Power Amplifier |
| Feature | Advance Product Information
March 21, 20 00
27 - 32 GHz 1W Power Amplifier
TGA 1172
Key Features • 0. 25 um pHEMT Te chnology • 18 dB Gain at 28 GHz • 2 9 dBm Nominal P1dB • 37dBm OTOI typic al at 28GHz • Input/Output RL < -10 d B • Bias 6 - 7V @ 630 mA Chip Dimensi ons 2. 69 mm x 1. 37 mm Small Signal Gain 15 10 Return g Loss (dB) ( ) 25 Prim ary Applications • Point-to-Point Rad io • Point-to-Multipoint Communicatio ns • Ka Band Sat-Com Vd1 Vg2 Vd2 Vg3 RF OUT Vd3 6V, 630 mA 5 0 -5 -10 -15 -20 10 15 S11 S21 15 5 Gain (dB) -5 -15 -25 S22 20 25 30 35 -35 -45 40 RF IN 600µm 1200µm 2400µm Vg1 V . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
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