Document
Advance Product Information
March 21, 2000
27 - 32 GHz 1W Power Amplifier
TGA1172
Key Features • 0.25 um pHEMT Technology • 18 dB Gain at 28 GHz • 29 dBm Nominal P1dB • 37dBm OTOI typical at 28GHz • Input/Output RL < -10 dB • Bias 6 - 7V @ 630 mA
Chip Dimensions 2.69 mm x 1.37 mm Small Signal Gain
15 10
Return g Loss (dB) ( )
25
Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications • Ka Band Sat-Com
Vd1 Vg2 Vd2 Vg3 RF OUT Vd3
6V, 630 mA
5 0 -5 -10 -15 -20 10 15 S11
S21
15 5
Gain (dB)
-5 -15 -25 S22 20 25 30 35 -35 -45 40
RF IN
600µm
1200µm
2400µm
Vg1 Vd1
Vg2 Vd2
Vg3 Vd3
Amplifier Topology
Frequency (GHz)
Output Power at P1dB
32 30 29 28 27 26 25 26 27 28 29 30 31 32
Frequency (GHz) Output TOI (dBm)
Output Third Order Intercept
40 39 38 37 36 35 34 33 32 31 30 26 27 28 29 30
31
P1dB (dBm)
6V, 630 mA
(
)
6V, 630 mA
31
32
33
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
March 21, 2000
TGA1172
TGA1172 Single tone pout and IMD3 vs Pin
Frequency = 28GHz, 6V, 630 mA 25 10
20
0
15
-10
10 SCL Power 5 IMD3
-20
-30
0 -5 -4 -3 -2 -1 0 Pin (dBm) 1 2 3 4 5
-40
TGA1172 Single tone pout and IMD3 vs Pin
Frequency = 31GHz, 6V, 630 mA 25 10
20
0
15
-10
10 SCL Power 5 IMD3
-20
-30
0 -5 -4 -3 -2 -1 0 Pin (dBm) 1 2 3 4 5
-40
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
IMD3 (dBm)
Pout (dBm)
IMD3 (dBm)
Pout (dBm)
Advance Product Information
March 21, 2000
TGA1172
Vd
100pF
0.01µF
5mil Ribbon
5mil Ribbon
100pF
0.01µF
Vg
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
March 21, 2000
TGA1172 Assembly Process Notes
Reflow process assembly notes: •= •= •= •= •= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:.