Noise Amplifier. TGA1319A Datasheet

TGA1319A Amplifier. Datasheet pdf. Equivalent


TriQuint Semiconductor TGA1319A
Advance Product Information
August 29, 2000
Ka Band Low Noise Amplifier
TGA1319A
Chip Dimensions 1.985 mm x .980 mm
Preliminary Data, 2 Fixtured samples @ 25C
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
15 16 17 18 19 20 21 22 23 24 25 26 27
Typical NF @ 25C
30
28
26
24
22
20
18
16
14
12
10
15 16 17 18 19 20 21 22 23 24 25 26
Typical Gain @ 25C
Key Features and Performance
• 0.15um pHEMT Technology
• 21-27 GHz Frequency Range
• 2 dB Nominal Noise Figure
• 19 dB Nominal Gain
• 12 dBm Pout
• 3V, 45 mA
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
0
-4
-8
-12
-16
-20
15 16 17 18 19 20 21 22 23 24 25 26
Typical S11 @ 25C
0
-5
-10
-15
-20
15 16 17 18 19 20 21 22 23 24 25 26
Typical S22 @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1


TGA1319A Datasheet
Recommendation TGA1319A Datasheet
Part TGA1319A
Description Ka Band Low Noise Amplifier
Feature TGA1319A; Advance Product Information August 29, 2000 Ka Band Low Noise Amplifier TGA1319A Key Features and .
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1319A Datasheet




TriQuint Semiconductor TGA1319A
RFin
Advance Product Information
August 29, 2000
TGA1319A
Vd=3V
100 100
pF pF
RFout
100
pF
Vg1
100
pF
Vg2
TGA1319A - Recommended Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com



TriQuint Semiconductor TGA1319A
Advance Product Information
August 29, 2000
TGA1319A
Assembly Process Notes
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com







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