Wideband LNA/Driver. TGA1319C Datasheet

TGA1319C LNA/Driver. Datasheet pdf. Equivalent

TGA1319C Datasheet
Recommendation TGA1319C Datasheet
Part TGA1319C
Description Ka Band Wideband LNA/Driver
Feature TGA1319C; Advance Product Information August 29, 2000 Ka Band Wideband LNA/Driver TGA1319C Key Features and.
Manufacture TriQuint Semiconductor
Datasheet
Download TGA1319C Datasheet




TriQuint Semiconductor TGA1319C
Advance Product Information
August 29, 2000
Ka Band Wideband LNA/Driver
TGA1319C
Chip Dimensions 2.169 mm x .904 mm
3
2 .5
2
1 .5
21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26
Fre q ue n cy
Typical NF @ 25C
Key Features and Performance
• 0.15um pHEMT Technology
• 16-30 GHz Frequency Range
• 2.25 dB Nominal Noise Figure midband
• 21 dB Nominal Gain
• 14 dBm Pout
• 5V, 60 mA
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
0
-5
-10
-15
-20
-25
-30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency ( GHz)
Typical S11 @ 25C
25
20
15
10
5
0
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency ( GHz)
Typical Gain @ 25C
0
-5
-10
-15
-20
-25
-30
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Frequency ( GHz)
Typical S22 @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1



TriQuint Semiconductor TGA1319C
Advance Product Information
August 29, 2000
TGA1319C
RFin
RFout
TGA1319C- Recommended Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com



TriQuint Semiconductor TGA1319C
Advance Product Information
August 29, 2000
TGA1319C
Assembly Process Notes
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com







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