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TGA6316-EEU Datasheet, Equivalent, Power Amplifier.6 - 17 GHz Dual-Channel Power Amplifier 6 - 17 GHz Dual-Channel Power Amplifier |
Part | TGA6316-EEU |
---|---|
Description | 6 - 17 GHz Dual-Channel Power Amplifier |
Feature | Product Data Sheet
6 - 17 GHz Dual-Chan nel Power Amplifier
TGA6316-EEU
Key F eatures and Performance
• • • • • • 6 to 17 GHz Frequency Range Du al Channel Power Amplifier 20. 5dB Typic al Gain, Single Channel 1. 5:1 Typical I nput SWR, 2. 1:1 Typical Output SWR, Sin gle Channel 29. 5 dBm Output Power at 3 dB Gain Compression, (31dBm combined) 6 . 5024 x 4. 8006 x 0. 1016 mm (0. 256 x 0. 1 89 x 0. 004 in. ) Description The TriQui nt TGA6316-EEU is a dual channel GaAs m onolithic amplifier which operates from 6 to 17-GHz. Each channel features thr ee-stage topology with a 1200-mm dual-g ate FET distributed amplif . |
Manufacture | TriQuint Semiconductor |
Datasheet |
Part | TGA6316-EEU |
---|---|
Description | 6 - 17 GHz Dual-Channel Power Amplifier |
Feature | Product Data Sheet
6 - 17 GHz Dual-Chan nel Power Amplifier
TGA6316-EEU
Key F eatures and Performance
• • • • • • 6 to 17 GHz Frequency Range Du al Channel Power Amplifier 20. 5dB Typic al Gain, Single Channel 1. 5:1 Typical I nput SWR, 2. 1:1 Typical Output SWR, Sin gle Channel 29. 5 dBm Output Power at 3 dB Gain Compression, (31dBm combined) 6 . 5024 x 4. 8006 x 0. 1016 mm (0. 256 x 0. 1 89 x 0. 004 in. ) Description The TriQui nt TGA6316-EEU is a dual channel GaAs m onolithic amplifier which operates from 6 to 17-GHz. Each channel features thr ee-stage topology with a 1200-mm dual-g ate FET distributed amplif . |
Manufacture | TriQuint Semiconductor |
Datasheet |
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