Block Amplifier. TGA6345-EEU Datasheet

TGA6345-EEU Amplifier. Datasheet pdf. Equivalent

TGA6345-EEU Datasheet
Recommendation TGA6345-EEU Datasheet
Part TGA6345-EEU
Description 2 - 18 GHz Gain Block Amplifier
Feature TGA6345-EEU; Product Data Sheet 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • •.
Manufacture TriQuint Semiconductor
Datasheet
Download TGA6345-EEU Datasheet




TriQuint Semiconductor TGA6345-EEU
Product Data Sheet
2 - 18 GHz Gain Block Amplifier TGA6345-EEU
Key Features and Performance
• 2 to 18 GHz Frequency Range
• 23 dB Typical Gain
• 1.6:1 Typical Input / Output SWR
• 22 dBm Typical Output Power at 1 dB
Gain Compression
• 6 dB Typical Noise Figure
• 4.140 x 3.175 x 0.102 mm (0.163 x 0.125
x 0.004 in.)
Description
The TriQuint TGA6345-EEU is a monolithic amplifier which operates over the 2 to
18 GHz Frequency range. This device consist of three cascaded distributed
amplifier sections. Typical small signal gain is 23 dB, which is adjustable by
using the control voltage, VCTRL. The TGA6345-EEU provides 22 dBm typical output
power at 1 dB gain compression.
The TGA6345-EEU is suitable for a variety of applications such as phased array
radar's and wide-band electronic warfare systems including jammers and
expendable decoys, and electronic counter measures. Bond pad and backside
metallization is gold plated for compatibility with eutectic alloy attachment methods
as well as the thermosonic wire bonding processes. Ground is provided to the
circuitry through vias to the backside metallization.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGA6345-EEU
Product Data Sheet
TGA6345-EEU
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGA6345-EEU
Product Data Sheet
TGA6345-EEU
TYPICAL S-PARAMETERS
Fre que nc y
(GHz)
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
S 11
M AG ANG(o)
0.71 -45
0.50 -67
0.35 -97
0.31 -131
0.27 -171
0.21 147
0.12 104
0.01 -11
0.13 -156
0.22 162
0.25 115
0.24 66
0.22 12
0.14 -44
0.07 -94
0.02 -46
0.13 -12
0.18 -61
0.20 -116
0.16 -160
0.20 -174
S 21
M AG ANG(o)
0.39 75
8.52 -34
21.40 131
14.81 18
15.56 -72
15.66 -159
15.44 116
14.74 34
13.81 -46
13.19 -123
13.11 162
14.26 85
15.70 2
16.07 -83
16.07 -170
16.00 103
16.30 8
14.18 -86
12.09 -172
13.16 92
12.08 -6
S 12
M AG ANG(o)
0.000 -177
0.000 129
0.001 117
0.001 106
0.001 96
0.001 89
0.001 96
0.001 120
0.002 130
0.001 121
0.001 123
0.001 168
0.002 -160
0.002 -169
0.002 -174
0.003 -177
0.001 -166
0.003 164
0.002 169
0.003 3
0.005 -76
S 22
M AG ANG(o)
0.94 -74
0.40 -137
0.19 102
0.14 149
0.08 143
0.07 154
0.07 173
0.11 -176
0.18 174
0.22 154
0.21 132
0.17 126
0.16 135
0.23 135
0.24 116
0.19 115
0.21 113
0.27 106
0.29 91
0.37 39
0.18 -51
GAIN
(dB )
-8.2
18.6
26.6
23.4
23.8
23.9
23.8
23.4
22.8
22.4
22.4
23.1
23.9
24.1
24.1
24.1
24.2
23.0
21.7
22.4
21.6
Reference planes for S-parameter data include bond wires as specified in the “Recommended Bias Network”.
The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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