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Block Amplifier. TGA8226-SCC Datasheet |
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Product Data Sheet
2 - 6 GHz Gain Block Amplifier
TGA8226-SCC
Key Features and Performance
• 2 to 6 GHz Frequency Range
• 13.5 dB Gain
• 17 dBm Output Power at 1 dB Gain
Compression
• 5.5 dB Noise Figure
• Operates from Single 15V Supply
• 1.47 x 1.85 x 0.15 mm (0.058 x 0.073 x
0.006 in.)
Description
The TriQuint TGA8226-SCC is a self biased distributed amplifier and operates from
a single 15 V supply. Four 457 um FETs produce a typical gain greater than 13.5
dB, with input and output SWRs less than 2:1. Direct cascading without additional
components is possible by using the on-chip blocking capacitors. Ground is
provided to the circuitry through vias to the backside metallization.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as thermocompression and thermosonic wire-
bonding processes. The TGA8226-SCC is available in chip form and is readily
assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TYPICAL
SMALL-SIGNAL
POWER GAIN
TYPICAL
NOISE FIGURE
TYPICAL
OUTPUT POWER
P1dB
Product Data Sheet
TGA8226-SCC
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TYPICAL
INPUT RETURN LOSS
TYPICAL
OUTPUT RETURN LOSS
Product Data Sheet
TGA8226-SCC
ABSOLUTE
MAXIMUM
RATINGS
Positive supply voltage, V+…………………………………………………………………………… 18 V
Pow er dissipation, PD at (or below ) 25oC base-plate temperature *……………………………… 4.4 W
Input continuous-w ave pow er, PIN……………………………………………………………………23 dB
Operating Channel temperature, TCH **…………………………………………………………………150oC
Mounting temperature (30 sec.), TM……………………………………………………………………320oC
Storage temperature range, TSTG………………………………………………………………………-65 to 150oC
Ratings over operating channel tem perature range, TCH (unless otherw ise noted).
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond
those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
* For operation above 25oC base-plate temperature, derate linearly at the rate of 9.2 mW/oC.
** Operating channel temperature (TCH) directly affects the device MTTF. For maximum life, it is recommended
that channel temperature be maintained at the low est possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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