Block Amplifier. TGA8349-SCC Datasheet

TGA8349-SCC Amplifier. Datasheet pdf. Equivalent

TGA8349-SCC Datasheet
Recommendation TGA8349-SCC Datasheet
Part TGA8349-SCC
Description Gain Block Amplifier
Feature TGA8349-SCC; T R I Q U I N T S E M I C O N D U C T O R , I N C . TGA8349-SCC Gain Block Am.
Manufacture TriQuint Semiconductor
Datasheet
Download TGA8349-SCC Datasheet




TriQuint Semiconductor TGA8349-SCC
T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGA8349-SCC
8349Gain Block Amplifier
q DC to 14 -GHz Frequency Range
q 1.2:1 Input SWR, 1.3:1 Output SWR
q 11-dB Small Signal Gain
q 16-dBm Output Power at 1 -dB Gain Compression at Midband
q 3.1-dB Noise Figure at Midband
q 3,4290 x 2,2860 x 0,101 mm (0.135 x 0.090 x 0.004 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA8349 -SCC is a GaAs monolithic low -noise distributed amplifier designed
for use as a multi -octave general-purpose gain block. Nine 122 -µm gate width FETs provide 11-dB
nominal gain and 3.1- dB noise figure from DC to 14 -GHz. Typical power output is 16 -dBm at
1-dB gain compression. Typical input SWR is 1.2:1 and output SWR is 1.3:1. Gr ound is provided to
the circuitry through vias to the backside metallization.The DC to 14 -GHz frequency range, dual -gate
AGC control and gain-flatness characteristics make the TGA8349 -SCC suitable for many system
applications including fiber optic.
The TGA8349-SCC is supplied in chip for m and is engineer ed for high -volume automated assembly.
All metal sur faces are gold plated to be compatible with ther mocompression and thermosonic
wire-bonding processes.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com



TriQuint Semiconductor TGA8349-SCC
TGA8349-SCC
TYPICAL
SMALL SIGNAL
POWER GAIN
TYPICAL
NOISE FIGURE
TYPICAL
OUTPUT POWER
P1dB
20 VV++==88VV
VVCCTRTRLL==11.5.5VV
II++ = 80 mA
16 TTAA==2255°°CC
12
8
4
0
0 2 4 6 8 10 12 14
Frequency (GHz)
8 V V+=+ 8= V8 V
7 VI C+VIT+RC=TL=R=8L80=10.m51mA.V5A V
6 TAT=A =252°5C°C
5
4
3
2
1
0
0 2 4 6 8 10 12 14
Frequency (GHz)
20 V +==88VV
VCCTTRRLL==11..55VV
I ++ == 8800 mmAA
16 TTAA ==2255°°CC
12
8
4
0
0 2 4 6 8 10 12 14
Frequency (GHz)
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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TriQuint Semiconductor TGA8349-SCC
TGA8349-SCC
TYPICAL
RETURN LOSS
ABSOLUTE
MAXIMUM RATINGS
0 VV++==88VV
VCCTTRRLL==11.5.5VV
I+I +==8800mmAA
10 TAA == 2255°°C
20
30
40
50
0 2 4 6 8 10 12 14
Frequency (GHz)
IInnppuutt
OOuuttppuutt
Positive supply voltage, V+ .................................................................................................................. 13 V
Positive supply voltage range with respect to negative supply voltage, V+ - V .............................. 0 V to 13 V
Positive supply voltage range with r espect to gain control voltage, VCTRL - V+ .............................. 0 V to - 13 V
Negative supply voltage range, VG1 ............................................................................................ - 5 V to 0 V
Gain control voltage range, VCTRL ................................................................................................ - 5 V to 4 V
Positive supply current, I+ .............................................................................................................. 144 mA
Power dissipation, PD, at (or below) 25°C base-plate temperatur e* ...................................................... 2.6 W
Input continuous wave power, PIN .................................................................................................... 23 dBm
Operating channel temperature, TCH** ......................................................... ..................................... 150°C
Mounting temperature (30 sec), TM .................................................................................................. 320°C
Storage temperature range, TSTG ............................................................................................ - 65 to 150°C
Ratings over channel temperatur e range, TCH (unless otherwise noted)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond
those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for
extended periods may affect device reliability.
* For operation above 25°C base -plate temperature, derate linearly at the rate of 5.5 mW/5C.
** Operating channel temperature directly af fects the device MTTF. For maximum life, it is r ecommended that
channel temperature be maintained at the lowest possible level.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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