23 - 29 GHz High Power Amplifier
Product Datasheet
23 - 29 GHz High Power Amplifier
TGA9070-SCC
Key Features and Performance
• • • • • • 0.25um pHEMT ...
Description
Product Datasheet
23 - 29 GHz High Power Amplifier
TGA9070-SCC
Key Features and Performance
0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt (28GHz) @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4.1mm x 3.0mm
Primary Applications
LMDS Point-to-Point Radio
Description
The TriQuint TGA9070-SCC is a three stage HPA MMIC design using TriQuint’s proven 0.25 um Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio, LMDS/LMCS and Ka-band satellite spacecraft and ground terminals. The three stage design consists of a 400 um input device driving a pair of 600 um interstage devices followed by four 600 um output devices. The TGA9070 provides greater than 1W of output power across 23-29 GHz with a typical PAE of 35%. Typical small signal gain is 23 dB. The TGA9070 requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
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Product Datasheet
TABLE I RECOMMENDED MAXIMUM RATINGS SYMBOL V+ I+ PD PIN TCH TM T STG 1/ 2/ PARAMETER POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT POWER DISSIPATION INPUT CONTINUOUS WAVE POWER OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE VALUE 8V 1A 8W 20dBm 150 0C 320 0C -65 to 150 0C 2/ 3/ 1/ NOTES
Total current for all 3...
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