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TGA9070-SCC Datasheet, Equivalent, Power Amplifier.23 - 29 GHz High Power Amplifier 23 - 29 GHz High Power Amplifier |
| Part | TGA9070-SCC |
|---|---|
| Description | 23 - 29 GHz High Power Amplifier |
| Feature | Product Datasheet
23 - 29 GHz High Powe r Amplifier
TGA9070-SCC
Key Features and Performance
• • • • • • 0. 25um pHEMT Technology 23 GHz - 29 GH z Frequency Range Nominal 1 Watt (28GHz ) @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4. 1mm x 3. 0mm Primary Applications • • LMDS Poin t-to-Point Radio Description The TriQu int TGA9070-SCC is a three stage HPA MM IC design using TriQuint’s proven 0. 2 5 um Power pHEMT process to support a v ariety of millimeter wave applications including point-to-point digital radio, LMDS/LMCS and Ka-band satellite spacec raft and ground terminals. The t . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
| Part | TGA9070-SCC |
|---|---|
| Description | 23 - 29 GHz High Power Amplifier |
| Feature | Product Datasheet
23 - 29 GHz High Powe r Amplifier
TGA9070-SCC
Key Features and Performance
• • • • • • 0. 25um pHEMT Technology 23 GHz - 29 GH z Frequency Range Nominal 1 Watt (28GHz ) @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4. 1mm x 3. 0mm Primary Applications • • LMDS Poin t-to-Point Radio Description The TriQu int TGA9070-SCC is a three stage HPA MM IC design using TriQuint’s proven 0. 2 5 um Power pHEMT process to support a v ariety of millimeter wave applications including point-to-point digital radio, LMDS/LMCS and Ka-band satellite spacec raft and ground terminals. The t . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
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