Power Amplifier. TGA9083-EEU Datasheet

TGA9083-EEU Amplifier. Datasheet pdf. Equivalent

TGA9083-EEU Datasheet
Recommendation TGA9083-EEU Datasheet
Part TGA9083-EEU
Description Power Amplifier
Feature TGA9083-EEU; T R I Q U I N T S E M I C O N D U C T O R , I N C . TGA9083-EEU Power Amplifi.
Manufacture TriQuint Semiconductor
Datasheet
Download TGA9083-EEU Datasheet




TriQuint Semiconductor TGA9083-EEU
T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGA9083-EEU
9083Power Amplifier
q 6.5 to 11.5- GHz Frequency Range
q 5-Watt Output Power at 7V , 6-W at 8V, 8-W at 9 Volt Drain Bias
q 19-dB Typical Small Signal Gain
q 40% Power Added Efficiency at 7V, 35% PAE at 9 Volt Drain Bias
q 12-dB Typical Input Return Loss, 9- dB Typical Output Return Loss
q On-Chip Active Gate Bias Circuit Option Simplifies Biasing
q 4, 521 x 3,048 x 0,100 mm (0.178 x 0.120 x 0.004 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA9083 - EEU is a monolithic power amplifier which operates from 6.5 to
11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage power
amplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. The
TGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts.
Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40
percent. Typical small signal gain is 1 9-dB. In balanced configuration, 12 Watts of output power is
achievable with 40 % PAE.
The TGA9083-EEU is fabricated using TI’s 0.25um T-gate power pHEMT process. This device offer s
either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing . The
active gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiency
over 6.5 to 11.5 GHz mak e it a viable power amp solution in applications such as point-to-point radio ,
phased-array radar, and telecommunications.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as with thermocompression and thermosonic wire -bonding processes.
The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment.
Ground is provided to the circuitr y through vias to the backside metallization.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com



TriQuint Semiconductor TGA9083-EEU
TGA9083-EEU
TYPICAL
OUTPUT POWER
TYPICAL
POWER-ADDED
EFFICIENCY
TYPICAL
SMALL SIGNAL GAIN
40 PIN= 21 dBm
38 ID = 1.1 A
TA = 30 ° C
36
34
32
30
28
26
Drain Voltage:
24
7V
22 8 V
9V
20
6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency (GHz)
50 PIN= 21 dBm
ID = 1.1 A
45 TA = 30 ° C
40
35
30
25
20 Drain Voltage:
15
10
6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
7V
8V
9V
Frequency (GHz)
40 ID = 1.1 A
35 TA = 30 ° C
30
25
20
15
10 Drain Voltage:
5
0
6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
7V
8V
9V
Frequency (GHz)
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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TriQuint Semiconductor TGA9083-EEU
TGA9083-EEU
TYPICAL
INPUT RETURN LOSS
0
ID = 1.1 A
TA = 30 ° C
5
10
15
20
25 Drain Voltage:
7V
8V
30 9 V
6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency (GHz)
TYPICAL
OUTPUT RETURN LOSS
0
ID = 1.1 A
TA = 30 ° C
5
10
15
20
Drain Voltage:
25
7V
8V
30 9 V
6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
Frequency (GHz)
TYPICAL
DRAIN CURRENT
3000
2500
PIN= 21 dBm
ID = 1.0 to 1.1 A
TA = 30 ° C
2000
1500
1000
Drain Voltage:
500
0
6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
7V
8V
9V
Frequency (GHz)
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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