Power Amplifier. TGA9088A-EPU Datasheet

TGA9088A-EPU Amplifier. Datasheet pdf. Equivalent

TGA9088A-EPU Datasheet
Recommendation TGA9088A-EPU Datasheet
Part TGA9088A-EPU
Description 17-21 GHz Intermediate Power Amplifier
Feature TGA9088A-EPU; Advance Product Information May 3, 2000 17-21 GHz Intermediate Power Amplifier • • • • • • TGA9088.
Manufacture TriQuint Semiconductor
Datasheet
Download TGA9088A-EPU Datasheet




TriQuint Semiconductor TGA9088A-EPU
Advance Product Information
May 3, 2000
17-21 GHz Intermediate Power Amplifier TGA9088A-EPU
Chip Dimensions 2.41mm x 1.52 mm x 0.1mm
Key Features and Performance
• 0.25um pHEMT Technology
• 17-21GHz Frequency Range
• 22 dBm @ P2dB Nominal Pout
• 18.5 dBm Nominal Gain
• IRL>18 dB, ORL>10 dB
• 7V, 66mA Self Bias
Primary Applications
• Satellite Systems
• Point-to-Point Radio
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17.0
EG1901A(TGA9088A), LOT # 9733701-1,2,3: On-Wafer-Testing (1640 Devices)
Self Bias@V+ = 5V, Vd = 7V, Id >= 56 mA
17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
mean
X-s
X+s
Measured Pout at 2dB Gain Compression
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16.0
EG1901A (TGA9088A), LOT # 9733701-1,2,3: On-Wafer-Testing (1640 Devices)
Self Bias @ V+ = 5V, Vd = 7V, Id >= 56 mA
16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0
Frequency (GHz)
mean
X-s
X+s
Measured Small Signal Gain
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGA9088A-EPU
Advance Product Information
May 3, 2000
TGA9088A
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com



TriQuint Semiconductor TGA9088A-EPU
Advance Product Information
May 3, 2000
TGA9088A
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com







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