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GHz Downconverter. TGC1411 Datasheet |
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Advance Product Information
0.3 - 10 GHz Downconverter
TGC1411-EPU
Key Features and Performance
• 0.25um pHEMT Technology
• 0.3-10 GHz RF/LO Frequency Range
• 0.15-2.5 GHz IF Frequency Range
• Nominal Conversion Gain of 12 dB
• Bias 3-5V @ 26 mA
• Chip Dimensions 1.8 mm x 2.6mm
Primary Applications
The TriQuint TGC1411-EPU is a double balanced
MMIC mixer design using TriQuint’s proven 0.25 um
Power pHEMT process to support a variety of
communication system applications including satellite.
The double balanced design consists of an integrated
Gilbert cell mixer core, RF/LO baluns, differential
combiner, and output driver amplifier. The TGC1411
may be operated from a single +3 V to +5 V power
supply with typical current draw of 26 mA. The
nominal LO power requirement is -5 dBm. The
TGC1411 may also be operated as an up-converter.
• Satellite Systems
• Point-to-Point Radio
TGCT1G41A11411 Typical Down-Conversion Gain
LSB, +5.0V, LO = -5dBm, +25C
18
15
12 IF=151MHz
IF=501MHz
IF=1001MHz
IF=1501MHz
9 IF=2001MHz
IF=2501MHz
The TGC1411 requires a minimum of off-chip
components employing only a 100 pF off-chip bypass
capacitor for the power supply line. No additional off-
chip RF matching components are required. Each
device is 100% DC and RF tested on-wafer to ensure
performance compliance. The device is available in
chip form.
RF IF
IN OUT
6
3
0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1
RF Frequency (GHz)
TGCT1G4A111411 Typical P1dB and SSB Noise Figure
LSB, +5.0V, LO = -5dBm, +25C
1 18
0 17
-1 16
-2 P1dB
-3
15
14
-4 13
-5 12
-6
Noise
11
Figure
-7 10
-8 9
LO
IN
-9 8
0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1
RF Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
Symbol
V+
I+
PD
PIN
TCH
TM
TSTG
Parameter
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
80 mA
0.64 W
14 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for the entire MMIC
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
VP Test FET
BVTest FET
BVTest FET
Parameter
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
-1.5
-30
-30
Maximum
-0.5
-8
-8
Value
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol Parameter
G
ILO
P1dB
Conversion
Gain
LO Isolation
Output P1dB
IDC DC Current
Test Condition
Vd=5V, LO=-5dBm
FRF = 1.0 GHz
FLO = 1.6 GHz
FLO = 1.6 GHz
FRF = 1.0 GHz
FLO = 1.6 GHz
Limit
Min Nom
13 16
- -30
-5 -1
- 26
Max
20
-20
-
35
Units
dB
dB
dB
dBm
mA
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
RF-Probe Performance Summary
3500
3000
Mean = 16.7 dB
Sigma = 0.54 dB
2500
2000
1500
1000
500
0
DDoowwnn--CCoonnvveerrssiioonnGGaaiinn
700
Mean = 29.3 dB
600 Sigma = 7.7 dB
500
400
300
200
100
0
LO to Output Isolation (dB)
LLOO--IIFFIIssoollaattiioonn
Typical Performance
Parameter
RF Frequency
IF Frequency
LO Frequency
LO Power
Conversion Gain*
Output P1dB*
SSB Noise Figure*
LO Isolation
Input Port Return Loss
Output Port Return Loss
LO Port Return Loss
Supply Current
Units
GHz
GHz
GHz
dBm
dB
dBm
dB
dB
dB
dB
dB
mA
* IF = 501 MHz
+5V Supply
0.3 - 10.0
0.15 - 2.5
0.45 - 12.5
-5
105
1-71.0
01.10
1-53.00
-12
-12
-12
26
28.0
+3V Supply
0.3 - 10.0
0.15 - 2.5
0.45 - 12.5
-5
103
1-48.5
-141.5
1-13.00
-12
-12
-12
22
24.0
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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