Down Converter. TGC1430E Datasheet

TGC1430E Converter. Datasheet pdf. Equivalent

TGC1430E Datasheet
Recommendation TGC1430E Datasheet
Part TGC1430E
Description Single-Balanced Down Converter
Feature TGC1430E; Advance Product Information August 29, 2000 Single-Balanced Down Converter TGC1430E Key Features .
Manufacture TriQuint Semiconductor
Datasheet
Download TGC1430E Datasheet




TriQuint Semiconductor TGC1430E
Advance Product Information
August 29, 2000
Single-Balanced Down Converter
TGC1430E
Chip Dimensions 1.26 mm x 1.19 mm
Key Features and Performance
• 0.25um pHEMT Technology
• 20-40 GHz RF/LO Range
• DC -1GHz IF
• -8 dB conversion Gain at 500MHz IF
• +15dBm LO drive
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
Conversion Gain vs IF Frequency
50
45
40
35
30
25
20
15
10
5
0
2
LO Drive Level = +15dBm
RF Drive Level = -15dBm
6 10 14 18 22 26 30 34 38 42 46 50
Frequency (GHz)
R2I L2I
RF and LO to IF Isolation
Conversion Gain vs LO Drive
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
18 20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
Drive Level (dBm): 12.5 15 17.5
LO Return Loss
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGC1430E
Advance Product Information
August 29, 2000
TGC1430E
TGC1430E - Recommended Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com



TriQuint Semiconductor TGC1430E
Advance Product Information
August 29, 2000
TGC1430E
Assembly Process Notes
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com







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