|
|
Frequency Multiplier. TGC1430F Datasheet |
|
|
|
Advance Product Information
August 29, 2000
20 - 40 GHz X2 Frequency Multiplier
TGC1430F
Key Features and Performance
• 0.25um pHEMT Technology
• 20 - 40 GHz Output Frequencies
• 10 - 20 GHz Fundamental Frequencies
• -12 +/- 2dB Conversion Gain
• 18 dBm Input Drive Optimum
• 25dB Fundamental Isolation
Chip Dimensions 1.50 mm x 1.50 mm
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
0.0
-5.0
-10.0
-15.0
-20.0
@17.5dBm
-25.0
-30.0
6.0
8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0
Input Frequency(GHz)
Conversion Gain vs Input Frequency (Input @ 17.5dBm)
45
40
35
30
25
20
15
10
5
0
6 8 10 12 14 16 18 20 22
Input Frequency (GHz)
@17.5dBm
0 35
-5 30
-10 25
-15 20
-20 15
Input Driveof +17.5dBm
-25 10
13.5 14.0 14.5 15.0 15.5 16.0
Input Frequency(GHz)
Conversion Gain and Fundamental Isolation
for 27 - 32 GHz Output
Fundamental Isolation
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
|
Advance Product Information
August 29, 2000
TGC1430F
TGC1430F - Recommended Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
|
Advance Product Information
August 29, 2000
TGC1430F
Assembly Process Notes
Reflow process assembly notes:
•= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
•= alloy station or conveyor furnace with reducing atmosphere
•= no fluxes should be utilized
•= coefficient of thermal expansion matching is critical for long-term reliability
•= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•= vacuum pencils and/or vacuum collets preferred method of pick up
•= avoidance of air bridges during placement
•= force impact critical during auto placement
•= organic attachment can be used in low-power applications
•= curing should be done in a convection oven; proper exhaust is a safety concern
•= microwave or radiant curing should not be used because of differential heating
•= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•= thermosonic ball bonding is the preferred interconnect technique
•= force, time, and ultrasonics are critical parameters
•= aluminum wire should not be used
•= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•= maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |