Frequency Multiplier. TGC1430G Datasheet

TGC1430G Multiplier. Datasheet pdf. Equivalent

TGC1430G Datasheet
Recommendation TGC1430G Datasheet
Part TGC1430G
Description 20 - 40 GHz X3 Frequency Multiplier
Feature TGC1430G; Advance Product Information August 29, 2000 20 - 40 GHz X3 Frequency Multiplier • • • • • • • Chip .
Manufacture TriQuint Semiconductor
Datasheet
Download TGC1430G Datasheet




TriQuint Semiconductor TGC1430G
Advance Product Information
August 29, 2000
20 - 40 GHz X3 Frequency Multiplier
TGC1430G
Chip Dimensions 1.50 mm x 2.0 mm
Key Features and Performance
• 0.25um pHEMT Technology
• 20 - 40 GHz Output Frequencies
• 8.5 - 13.5 GHz Fundamental Frequencies
• -15 +/- 2dB Conversion Gain
• 18 dBm Input Drive Optimum
• 15dB Fundamental Isolation
• 30dB 2nd Harmonic Isolation
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Communications
0
-5
-10
-15
-20
-25
-30
-35
6
8 10 12 14
Input Frequency (GHz) +18dBm
0
-5
-10
-15
-20
-25
-30
-35
6
8 10 12 14
Input Frequency (GHz)
+18dBm
Conversion Gain vs Input Frequency (Input @ 18dBm)
0
-10
-20
-30
-40
-50
-60
-70
6
8 10 12
Input Frequency (GHz)
2nd Harmonic Suppression
14
Fundamental Isolation
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGC1430G
Advance Product Information
August 29, 2000
TGC1430G
TGC1430G - Recommended Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com



TriQuint Semiconductor TGC1430G
Advance Product Information
August 29, 2000
TGC1430G
Assembly Process Notes
Reflow process assembly notes:
= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
= alloy station or conveyor furnace with reducing atmosphere
= no fluxes should be utilized
= coefficient of thermal expansion matching is critical for long-term reliability
= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
= vacuum pencils and/or vacuum collets preferred method of pick up
= avoidance of air bridges during placement
= force impact critical during auto placement
= organic attachment can be used in low-power applications
= curing should be done in a convection oven; proper exhaust is a safety concern
= microwave or radiant curing should not be used because of differential heating
= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
= thermosonic ball bonding is the preferred interconnect technique
= force, time, and ultrasonics are critical parameters
= aluminum wire should not be used
= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
= maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com







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