Discrete MESFET. TGF1350-SCC Datasheet

TGF1350-SCC MESFET. Datasheet pdf. Equivalent

TGF1350-SCC Datasheet
Recommendation TGF1350-SCC Datasheet
Part TGF1350-SCC
Description Discrete MESFET
Feature TGF1350-SCC; Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • 0.5 um x 300.
Manufacture TriQuint Semiconductor
Datasheet
Download TGF1350-SCC Datasheet




TriQuint Semiconductor TGF1350-SCC
Discrete MESFET
Product Data Sheet
TGF1350-SCC
Key Features and Performance
• 0.5 um x 300 um FET
• 1.5 dB Noise Figure with 11dB
Associated Gain at 10 GHz
• 2.5 dB Noise Figure with 7 dB
Associated Gain at 18 GHz
• All-gold Metallization for High Reliability
• Recessed Gate Structure
Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The TGF1350-SCC is readily assembled using automated equipment. Die attach
should be accomplished with conductive epoxy only. Eutectic attach is not
recommended .
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGF1350-SCC
Product Data Sheet
TGF1350-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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TriQuint Semiconductor TGF1350-SCC
Product Data Sheet
TGF1350-SCC
TYPICAL S-PARAMETERS
Fre q u e n c y
(GHz)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
S 11
MAG
0.98
0.96
0.93
0.93
0.90
0.89
0.88
0.87
0.85
0.83
0.82
0.82
0.81
0.81
0.80
0.79
0.78
0.78
0.77
0.78
0.77
0.77
0.76
0.75
0.75
0.74
0.74
0.74
0.73
0.72
0.73
0.73
0.74
ANG (°)
- 28
- 36
- 44
- 51
- 56
- 60
- 64
- 67
- 70
- 74
- 77
- 80
- 82
- 85
- 88
- 92
- 96
- 99
- 103
- 106
- 110
- 114
- 117
- 120
- 123
- 125
- 128
- 131
- 133
- 136
- 139
- 140
- 142
S 21
MAG ANG (°)
3.22
157
3.17
151
3.07
146
2.99
141
2.88
137
2.78
133
2.73
129
2.65
125
2.55
121
2.46
118
2.36
116
2.28
113
2.22
110
2.15
107
2.12
104
2.08
101
2.05
98
2.02
95
2.00
92
1.96
88
1.90
84
1.84
81
1.79
79
1.74
76
1.69
73
1.64
69
1.56
65
1.49
61
1.43
59
1.38
57
1.36
54
1.31
52
1.26
50
S 12
MAG
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.09
0.09
ANG (°)
75
71
68
65
62
61
60
58
56
55
54
54
53
52
51
51
51
50
48
46
44
42
39
37
35
32
29
25
23
21
21
22
22
S 22
MAG ANG (°)
0.71
- 12
0.71
- 14
0.71
- 14
0.69
- 16
0.68
- 17
0.68
- 19
0.67
- 24
0.66
- 28
0.66
- 30
0.66
- 31
0.66
- 32
0.66
- 32
0.66
- 33
0.65
- 34
0.65
- 38
0.65
- 40
0.65
- 43
0.65
- 45
0.65
- 48
0.65
- 51
0.65
- 54
0.64
- 56
0.64
- 58
0.64
- 60
0.64
- 64
0.64
- 69
0.65
- 74
0.66
- 78
0.65
- 81
0.65
- 81
0.66
- 81
0.66
- 82
0.66
- 83
TA = 25oC, VDS = 3 V, IDS = 15mA
Reference planes for S-parameter data are located at center of gate and drain bond
pads. Three 0.7 mil diameter wires, approximately 13 mils long, are bonded from the
center of each of the source pads to ground. The S-parameters are also available on
floppy disk and the world wide web.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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