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Discrete HFET. TGF4124-EPU Datasheet |
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TGF4124-EPU
412424 mm Discrete HFET
• 0.5 um gate finger length
• Nominal Pout of 12 Watts at 2.3 GHz
• Nominal PAE of 51.5% at 2.3 GHz
• Nominal Gain of 10.8 dB at 2.3 GHz
• Die size 36.0 x 81.0 x 4.0 mils
(0.914 x 2.057 x 0.102 mm)
TGF4124-EPU RF Performance at F = 2.3 GHz
Vd = 8.0 V, Vg = -1.1 V, Iq = 2.17 A and TA = 25°C
50
48
46
44
42
40
38
36
34
32
30
20
Pout
PAE
22
24 26 28
Input Power (dBm)
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
55
50
45
40
35
30
25
20
15
10
5
30 32
1
Web: www.triquint.com
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TGF4124-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25°C
Quiescent Id is 2.24 A (Vg = -1.1 V), 1.81 A (Vg = -1.3 V), and 1.37 A (Vg = -1.5 V)
140 42
130 41
120 40
110 39
100 38
90 37
Tch
80 36
70
Pout
60
50
40
55
35
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
34
33
32
50
45
40
35
30
25
20
15
Vg = -1.1V
10 Vg = -1.3 V
Vg = -1.5 V
5
14
13
12
11
10
9
8
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
7
20 21 22 23 24 25 26 27 28 29 30 31 32
Input Power (dBm)
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
2
Web: www.triquint.com
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TGF4124-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25°C
Quiescent Id is 2.17 A (Vg = -1.1 V), 1.80 A (Vg = -1.3 V), and 1.40 A (Vg = -1.5 V)
150 42
140 41
130 40
120 39
110 38
Tch
100 37
90 36
80
Pout
70
60
50
55
35
Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
34
33
32
50
45
40
35
30
25
20
15
Vg = -1.1V
10 Vg = -1.3 V
Vg = -1.5 V
5
14
13
12
11
10
9
8 Vg = -1.1V
Vg = -1.3 V
Vg = -1.5 V
7
20 21 22 23 24 25 26 27 28 29 30 31 32
Input Power (dBm)
TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504
3
Web: www.triquint.com
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