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TGF4230-EEU Datasheet, Equivalent, Discrete HFET.

1.2mm Discrete HFET

1.2mm Discrete HFET

 

 

 

Part TGF4230-EEU
Description 1.2mm Discrete HFET
Feature T R I Q U I N T S E M I C O N D U C T O R , I N C .
TGF42 30-EEU 1.
2mm Discrete HFET q q q q q q PHOTO ENLARGEMENT 1200 µm X 0.
5 µm HFET Nominal Pout of 28.
5- dBm at 8.
5- GHz Nominal Gain of 10.
0- dB at 8.
5- G Hz Nominal PAE of 55% at 8.
5 - GHz 423 0 Suitable for High-Reliability Applic ations 0,572 x 0,699 x 0,102 mm (0.
023 x 0.
028 x 0.
004 in.
) DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.
2 mm Discrete GaAs Heterostructure F ield Ef fect Transistor (HFET) designed for high- efficiency power application s up to 1 2- GHz in Class A and Class A B operation.
Bon .
Manufacture TriQuint Semiconductor
Datasheet
Download TGF4230-EEU Datasheet
Part TGF4230-EEU
Description 1.2mm Discrete HFET
Feature T R I Q U I N T S E M I C O N D U C T O R , I N C .
TGF42 30-EEU 1.
2mm Discrete HFET q q q q q q PHOTO ENLARGEMENT 1200 µm X 0.
5 µm HFET Nominal Pout of 28.
5- dBm at 8.
5- GHz Nominal Gain of 10.
0- dB at 8.
5- G Hz Nominal PAE of 55% at 8.
5 - GHz 423 0 Suitable for High-Reliability Applic ations 0,572 x 0,699 x 0,102 mm (0.
023 x 0.
028 x 0.
004 in.
) DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.
2 mm Discrete GaAs Heterostructure F ield Ef fect Transistor (HFET) designed for high- efficiency power application s up to 1 2- GHz in Class A and Class A B operation.
Bon .
Manufacture TriQuint Semiconductor
Datasheet
Download TGF4230-EEU Datasheet

TGF4230-EEU

TGF4230-EEU
TGF4230-EEU

TGF4230-EEU

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