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TGF4230-EEU Datasheet, Equivalent, Discrete HFET.1.2mm Discrete HFET 1.2mm Discrete HFET |
| Part | TGF4230-EEU |
|---|---|
| Description | 1.2mm Discrete HFET |
| Feature | T
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C . TGF42 30-EEU 1. 2mm Discrete HFET q q q q q q PHOTO ENLARGEMENT 1200 µm X 0. 5 µm HFET Nominal Pout of 28. 5- dBm at 8. 5- GHz Nominal Gain of 10. 0- dB at 8. 5- G Hz Nominal PAE of 55% at 8. 5 - GHz 423 0 Suitable for High-Reliability Applic ations 0,572 x 0,699 x 0,102 mm (0. 023 x 0. 028 x 0. 004 in. ) DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1. 2 mm Discrete GaAs Heterostructure F ield Ef fect Transistor (HFET) designed for high- efficiency power application s up to 1 2- GHz in Class A and Class A B operation. Bon . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
| Part | TGF4230-EEU |
|---|---|
| Description | 1.2mm Discrete HFET |
| Feature | T
R
I
Q
U
I
N
T
S
E
M
I
C
O N
D
U
C
T O
R ,
I
N
C . TGF42 30-EEU 1. 2mm Discrete HFET q q q q q q PHOTO ENLARGEMENT 1200 µm X 0. 5 µm HFET Nominal Pout of 28. 5- dBm at 8. 5- GHz Nominal Gain of 10. 0- dB at 8. 5- G Hz Nominal PAE of 55% at 8. 5 - GHz 423 0 Suitable for High-Reliability Applic ations 0,572 x 0,699 x 0,102 mm (0. 023 x 0. 028 x 0. 004 in. ) DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1. 2 mm Discrete GaAs Heterostructure F ield Ef fect Transistor (HFET) designed for high- efficiency power application s up to 1 2- GHz in Class A and Class A B operation. Bon . |
| Manufacture | TriQuint Semiconductor |
| Datasheet |
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