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Discrete HFET. TGF4230-EEU Datasheet |
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T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGF4230-EEU
423 01.2mmDiscrete HFET
q 1200 µm X 0.5 µm HFET
q Nominal Pout of 28.5- dBm at 8.5- GHz
q Nominal Gain of 10.0- dB at 8.5- GHz
q Nominal PAE of 55% at 8.5 - GHz
q Suitable for High-Reliability Applications
q 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field
Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and
Class AB operation.
Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods
as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is
readily assembled using automatic equipment.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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TGF4230-EEU
EXAMPLE OF
DC I-V CURVES
0.3
0.25
0.2
VG = 0.0 to -2.25 V
(0.25 V steps)
TA = 25°C
0.15
0.1
0.05
0
0 1 2 3 4 5 6 7 8 9 10
Drain Voltage (V)
OUTPUT POWER VS.
INPUT POWER
30
F = 8.5GHz
V D =8.0V
28 I Q =50mA*
T A =25°C
26
24
22
20
18
16
4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Note: IQ is defined as the drain current before application of RF signal at the input.
POWER ADDED
EFFICIENCY VS.
INPUT POWER
60 F = 8.5GHz
55
V D =8.0V
I Q =50mA*
50 T A =25°C
45
40
35
30
25
20
15
10
5
4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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TGF4230-EEU
GAIN VS.
INPUT POWER
DRAIN CURRENT
VS. INPUT POWER
12 F =8.5GHz
V D =8.0V
I Q =50mA*
11 T A =25°C
10
9
8
7
4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
180
160
140
120
100
F =8.5GHz
V D =8.0V
I Q =50mA*
T A =25°C
80
60
40
4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
ABSOLUTE
MAXIMUM RATINGS
Drain - to- source Voltage, VDS. ................................................................................................................ 12 V
Gate - to- source Voltage, VGS ...................................................................................................... - 5 V to 0 V
Mounting temperatur e (30 sec), TM .................................................................................................. 320 C
Storage temperature range, TSTG ............................................................ ................................ - 65 to 200 C
Power dissipation, PD .................................................................................. (see thermal data on next page)
Operating channel temperature, TCH .............................................................. (see thermal data on next page)
Ratings over base-plate temperature range TBP (unless otherwise noted)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated “RF and DC Characteristics” is not implied. Exposure to absolute maximum rated conditions for
extended periods of time may affect device reliability.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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