SSB APPLICATIONS. TH416 Datasheet

TH416 APPLICATIONS. Datasheet pdf. Equivalent

TH416 Datasheet
Recommendation TH416 Datasheet
Part TH416
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Feature TH416; SD1729 (TH416) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 M.
Manufacture ST Microelectronics
Datasheet
Download TH416 Datasheet




ST Microelectronics TH416
SD1729 (TH416)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.......OPTIMIZED FOR SSB
30 MHz
28 VOLTS
IMD 30 dB
COMMON EMITTER
GOLD METALLIZATION
POUT = 130 W PEP WITH 12 dB GAIN
.500 4LFL (M174)
epoxy sealed
ORDER CODE
SD1729
B RA ND IN G
TH416
PIN CONNECTION
DESCRIPTION
The SD1729 is a Class AB 28 V epitaxial silicon
NPN planar transistor designed primarily for SSB
communications. This device utilizes emitter bal-
lasting to achieve extreme ruggedness under
severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
70
35
4.0
12
175
+200
65 to +150
Unit
V
V
V
A
W
°C
°C
1.0 °C/W
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ST Microelectronics TH416
SD1729 (TH416)
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCES
BVCEO
BVEBO
ICES
hFE
IC = 50 mA
IC = 100 mA
IE = 20 mA
VCE = 35 V
VCE = 5 V
VBE = 0 V
IB = 0 mA
IC = 0 mA
IE = 0 mA
IC = 7 A
DYNAMIC
S ymb o l
Test Conditions
POUT f = 30 MHz
VCE = 28 V
GP POUT = 130 W PEP VCE = 28 V
IMD*
ηc
POUT = 130 W PEP VCE = 28 V
POUT = 130 W PEP VCE = 28 V
COB f = 1 MHz
VCB = 28 V
Note: * f1 = 30.00 MHz, f2 = 30. 001 MHz
ICQ = 150 mA
ICQ = 150 mA
ICQ = 150 mA
ICQ = 150 mA
TYPICAL PERFORMANCE
Min.
70
35
4.0
18
Va l u e
Typ. Max.
——
——
——
— 20
— 50
Unit
V
V
V
mA
Value
Min. Typ. Max.
130 — —
12 — —
— — 30
37 — —
— 220 —
Unit
W
dB
dBc
%
pF
SAFE OPERATING AREA
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ST Microelectronics TH416
TYPICAL PERFORMANCE (cont’d)
SD1729 (TH416)
INTERMODULATION DISTORTION vs
POWER OUTPUT
TEST CIRCUIT
C1 :
C2 :
C3, C4 :
C5 :
C6 :
C7 :
C8 :
C9 :
C10, C11 :
20 - 120pF
50 - 300pF
3.9nF
100nF
2.2µF
2 x 180pF in Parallel
3 x 56pF and 33pF in Parallel
4 x 56pF and 68pF in Parallel
360pF
L1 : 88nF
L2 : 22µH Choke Coil
L3, L5 : 80nF
L4 : Ferroxcube Choke Coil
R1 : 0.55
R2 : 27
R3 : 4.7
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