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TH50VSF3680 Datasheet, Equivalent, MULTI-CHIP PACKAGE.SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| Part | TH50VSF3680 |
|---|---|
| Description | SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| Feature | TH50VSF3680/3681AASB
TENTATIVE TOSHIBA M ULTI-CHIP INTEGRATED CIRCUIT SILICON GA TE CMOS
SRAM AND FLASH MEMORY MIXED MU LTI-CHIP PACKAGE DESCRIPTION
The TH50VS F3680/3681AASB is a mixed multi-chip pa ckage containing a 8,388,608-bit Full C MOS SRAM and a 67,108,864-bit flash mem ory. The CIOS and CIOF inputs can be us ed to select the optimal memory configu ration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. The TH50VSF3680/3681A ASB can range from 2. 7 V to 3. 3 V. The TH50VSF3680/3681AASB is available in a 69-pin BGA pac . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | TH50VSF3680 |
|---|---|
| Description | SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| Feature | TH50VSF3680/3681AASB
TENTATIVE TOSHIBA M ULTI-CHIP INTEGRATED CIRCUIT SILICON GA TE CMOS
SRAM AND FLASH MEMORY MIXED MU LTI-CHIP PACKAGE DESCRIPTION
The TH50VS F3680/3681AASB is a mixed multi-chip pa ckage containing a 8,388,608-bit Full C MOS SRAM and a 67,108,864-bit flash mem ory. The CIOS and CIOF inputs can be us ed to select the optimal memory configu ration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. The TH50VSF3680/3681A ASB can range from 2. 7 V to 3. 3 V. The TH50VSF3680/3681AASB is available in a 69-pin BGA pac . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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