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TH50VSF3680 Datasheet, Equivalent, MULTI-CHIP PACKAGE.SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| Part | TH50VSF3680 |
|---|---|
| Description | SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| Feature | TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. The TH50VSF3680/3681AASB can range from 2.7 V to 3.3 V. The TH50VSF3680/3681AASB is available in a 69-pin BGA pac. |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | TH50VSF3680 |
|---|---|
| Description | SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
| Feature | TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. The TH50VSF3680/3681AASB can range from 2.7 V to 3.3 V. The TH50VSF3680/3681AASB is available in a 69-pin BGA pac. |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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