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TH50VSF3681AASB Datasheet, Equivalent, MULTI-CHIP PACKAGE.

SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

 

 

 

Part TH50VSF3681AASB
Description SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
Feature TH50VSF3680/3681AASB TENTATIVE TOSHIBA M ULTI-CHIP INTEGRATED CIRCUIT SILICON GA TE CMOS SRAM AND FLASH MEMORY MIXED MU LTI-CHIP PACKAGE DESCRIPTION The TH50VS F3680/3681AASB is a mixed multi-chip pa ckage containing a 8,388,608-bit Full C MOS SRAM and a 67,108,864-bit flash mem ory.
The CIOS and CIOF inputs can be us ed to select the optimal memory configu ration.
The power supply.
FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.
The TH50VSF3680/3681A ASB can range from 2.
7 V to 3.
3 V.
The TH50VSF3680/3681AASB is available in a 69-pin BGA pac .
Manufacture Toshiba Semiconductor
Datasheet
Download TH50VSF3681AASB Datasheet
Part TH50VSF3681AASB
Description SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
Feature TH50VSF3680/3681AASB TENTATIVE TOSHIBA M ULTI-CHIP INTEGRATED CIRCUIT SILICON GA TE CMOS SRAM AND FLASH MEMORY MIXED MU LTI-CHIP PACKAGE DESCRIPTION The TH50VS F3680/3681AASB is a mixed multi-chip pa ckage containing a 8,388,608-bit Full C MOS SRAM and a 67,108,864-bit flash mem ory.
The CIOS and CIOF inputs can be us ed to select the optimal memory configu ration.
The power supply.
FLASH MEMORY a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.
The TH50VSF3680/3681A ASB can range from 2.
7 V to 3.
3 V.
The TH50VSF3680/3681AASB is available in a 69-pin BGA pac .
Manufacture Toshiba Semiconductor
Datasheet
Download TH50VSF3681AASB Datasheet

TH50VSF3681AASB

TH50VSF3681AASB
TH50VSF3681AASB

TH50VSF3681AASB

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