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TH562 Datasheet, Equivalent, SSB APPLICATIONS.RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| Part | TH562 |
|---|---|
| Description | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| Feature | SD1731 (TH562)
RF & MICROWAVE TRANSISTOR S HF SSB APPLICATIONS
. . . . . . . O PTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICI ENCY 40% COMMON EMITTER GOLD METALLIZAT ION POUT = 220 W PEP WITH 13 dB GAIN . 500 4LFL (M174) epoxy sealed ORDER CO D E SD1731 BRANDING TH562 PIN CONNECTION DESCRIPTION The SD1731 is a 50 V epit axial silicon NPN planar transistor des igned primarily for SSB communications. This device utilizes emitter ballastin g for improved ruggedness and reliabili ty. ABSOLUTE MAXIMUM RATINGS (Tcase = 2 5°C) Symbol Parameter Valu e Un it 1. Collector 2. Emitter 3. Base 4. Emitt er VCBO VCEO V . |
| Manufacture | ST Microelectronics |
| Datasheet |
| Part | TH562 |
|---|---|
| Description | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| Feature | SD1731 (TH562)
RF & MICROWAVE TRANSISTOR S HF SSB APPLICATIONS
. . . . . . . O PTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICI ENCY 40% COMMON EMITTER GOLD METALLIZAT ION POUT = 220 W PEP WITH 13 dB GAIN . 500 4LFL (M174) epoxy sealed ORDER CO D E SD1731 BRANDING TH562 PIN CONNECTION DESCRIPTION The SD1731 is a 50 V epit axial silicon NPN planar transistor des igned primarily for SSB communications. This device utilizes emitter ballastin g for improved ruggedness and reliabili ty. ABSOLUTE MAXIMUM RATINGS (Tcase = 2 5°C) Symbol Parameter Valu e Un it 1. Collector 2. Emitter 3. Base 4. Emitt er VCBO VCEO V . |
| Manufacture | ST Microelectronics |
| Datasheet |
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