GATE CMOS. TH58100FT Datasheet

TH58100FT CMOS. Datasheet pdf. Equivalent

TH58100FT Datasheet
Recommendation TH58100FT Datasheet
Part TH58100FT
Description TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Feature TH58100FT; TH58100FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT (128M ´ 8 BIT.
Manufacture Toshiba Semiconductor
Datasheet
Download TH58100FT Datasheet




Toshiba Semiconductor TH58100FT
TH58100FT
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M ´ 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 32 pages ´ 8192 blocks. The device has a 528-byte
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes
´ 32 pages).
The TH58100 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as
well as for command inputs. The Erase and Program operations are automatically executed making the device most
suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and
other systems which require high-density non-volatile memory data storage.
FEATURES
· Organization
Memory cell allay 528 ´ 128K ´ 8 ´ 2
Register
528 ´ 8
Page size
528 bytes
Block size
(16K + 512) bytes
· Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
Multi Block Program, Multi Block Erase
· Mode control
Serial input/output
Command control
· Power supply
VCC = 2.7 V to 3.6 V
· Program/Erase Cycles 1E5 cycle (with ECC)
· Access time
Cell array to register 25 ms max
Serial Read Cycle 50 ns min
· Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.)
10 mA typ.
Erase (avg.)
10 mA typ.
Standby
100 mA
· Package
TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
NC
NC
NC
NC
NC
GND
RY / BY
RE
CE
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 NC
47 NC
46 NC
45 NC
44 I/O8
43 I/O7
42 I/O6
41 I/O5
40 NC
39 NC
38 NC
37 VCC
36 VSS
35 NC
34 NC
33 NC
32 I/O4
31 I/O3
30 I/O2
29 I/O1
28 NC
27 NC
26 NC
25 NC
I/O1 to I/O8
CE
WE
RE
CLE
ALE
WP
RY/BY
GND
VCC
VSS
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Ground input
Power supply
Ground
000707EBA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2001-03-05 1/43



Toshiba Semiconductor TH58100FT
BLOCK DIAGRAM
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY/BY
I/O Control circuit
Logic control
RY/BY
Status register
Address register
Command register
Control
HV generator
TH58100FT
VCC VSS
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC
VIN
VI/O
PD
Tsolder
Tstg
Topr
Power Supply Voltage
Input Voltage
Input/Output Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
VALUE
-0.6 to 4.6
-0.6 to 4.6
-0.6 V to VCC + 0.3 V (£ 4.6 V)
0.3
260
-55 to 150
0 to 70
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN = 0 V
COUT
Output
VOUT = 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN
¾
¾
MAX
20
20
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
2001-03-05 2/43



Toshiba Semiconductor TH58100FT
TH58100FT
VALID BLOCKS (1)
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
8032
¾
8192
Blocks
(1) The TH58100 occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
Power Supply Voltage
VIH High Level input Voltage
VIL Low Level Input Voltage
* -2 V (pulse width lower than 20 ns)
MIN
2.7
2.0
-0.3*
TYP.
3.3
¾
¾
MAX
3.6
VCC + 0.3
0.8
UNIT
V
V
V
DC CHARACTERISTICS (Ta = 0° to 70°C, VCC = 2.7 V to 3.6 V)
SYMBOL
PARAMETER
CONDITION
MIN
IIL
Input Leakage Current
VIN = 0 V to VCC
ILO
Output Leakage Current
VOUT = 0.4 V to VCC
ICCO1
Operating Current (Serial Read) CE = VIL, IOUT = 0 mA, tcycle = 50 ns
ICCO3
Operating Current
(Command Input)
tcycle = 50 ns
ICCO4
Operating Current (Data Input) tcycle = 50 ns
ICCO5
Operating Current
(Address Input)
tcycle = 50 ns
ICCO7
ICCO8
ICCS1
ICCS2
VOH
VOL
Programming Current
Erasing Current
Standby Current
Standby Current
High Level Output Voltage
Low Level Output Voltage
¾
¾
CE = VIH
CE = VCC - 0.2 V
IOH = -400 mA
IOL = 2.1 mA
IOL ( RY/BY ) Output Current of RY/BY pin VOL = 0.4 V
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
2.4
¾
¾
TYP.
¾
¾
10
10
10
10
10
10
¾
¾
¾
¾
8
MAX
±10
±10
30
30
30
30
30
30
1
100
¾
0.4
¾
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
mA
2001-03-05 3/43







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