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SMJ44400 Datasheet, Equivalent, RANDOM-ACCESS MEMORY.1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY |
| Part | SMJ44400 |
|---|---|
| Description | 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY |
| Feature | DRAM
Austin Semiconductor, Inc. 1M x 4 DRAM
DYNAMIC RANDOM-ACCESS MEMORY
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-90847 • MIL-STD-883 SMJ44400 PIN ASSIGNMENT (Top View) 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) DQ1 DQ2 W RAS A9 A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 Vss DQ4 DQ3 CAS OE A8 A7 A6 A5 A4 FEATURES • Organized 1,048,576 x 4 • Single +5V ±10% power supply • Enhanced Page-Mode operation for faster memory access P Higher data bandwidth than conventional page-mode parts P Random Single-Bit Access within a row with a column address • CAS-Before-RA. |
| Manufacture | ETC |
| Datasheet |
| Part | SMJ44400 |
|---|---|
| Description | 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY |
| Feature | DRAM
Austin Semiconductor, Inc. 1M x 4 DRAM
DYNAMIC RANDOM-ACCESS MEMORY
AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-90847 • MIL-STD-883 SMJ44400 PIN ASSIGNMENT (Top View) 20-Pin DIP (JD) 20-Pin Flatpack (HR) (400 MIL) DQ1 DQ2 W RAS A9 A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 Vss DQ4 DQ3 CAS OE A8 A7 A6 A5 A4 FEATURES • Organized 1,048,576 x 4 • Single +5V ±10% power supply • Enhanced Page-Mode operation for faster memory access P Higher data bandwidth than conventional page-mode parts P Random Single-Bit Access within a row with a column address • CAS-Before-RA. |
| Manufacture | ETC |
| Datasheet |
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