SML100H11

SML100H11 TO–258 Package Outline. Dimensions in mm (inches) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035) 17.96 (0.707) 17.70 (0.697) 13.84 (0.545) 13.58 (0.535) 1 2 3 4.19 (0.165) 3.94 (0.155) Dia. 21.21 (0.835) 20.70 (0.815) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 1000V 11A ID(cont) RDS(on) 0.880Ω 3.56 (0.140) BSC 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. Pin 1 – Drain Pin 2 – Source Pin 3 – Gate Faster Switching Lower Leakage TO–258 Hermetic Package D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 1000 11 44 ±30 ±40 250 2.0 –55 to 150 300 11 30 1300 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2)...