N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML100J34
SOT–227 Package Outline.
Dimensions in mm (inches)
3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 ....
Description
SML100J34
SOT–227 Package Outline.
Dimensions in mm (inches)
3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 )
Hex Nut M 4 (4 places)
1
R
2
4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 )
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
4
3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 )
3
5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 )
R =
4 .0 (0 .1 57 ) (2 P lac e s)
S
D
VDSS 1000V 34A ID(cont) RDS(on) 0.250Ω
Faster Switching Lower Leakage 100% Avalanche Tested Popular SOT–227 Package
S
G
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source...
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