| Feature |
SML100W18
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 1000V 17.3A ID(cont) RDS(on) 0.570Ω
• Faster Switching • Lower Leakage • TO–267 Hermetic Package
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR . |
