N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML10S75XX
D3PAK Package Outline.
Dimensions in mm (inches)
4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 15.95 (...
Description
SML10S75XX
D3PAK Package Outline.
Dimensions in mm (inches)
4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 15.95 (0.628) 16.05 (0.632) 13.41 (0.528) 13.51 (0.532)
1.04 (0.041) 1.15 (0.045)
13.79 (0.543) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08 (0.082) 5.45 (0.215) BSC 2 plcs.
11.51 (0.453) 11.61 (0.457)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1
2
3
1.27 (0.050) 1.40 (0.055) 3.81 (0.150) 4.06 (0.160)
2.67 (0.105) 2.84 (0.112)
VDSS 100V 75A ID(cont) RDS(on) 0.019W
Pin 3 – Source
Pin 1 – Gate
Pin 2 – Drain Heatsink is Drain.
Faster Switching Lower Leakage 100% Avalanche Tested Surface Mount D3PAK Package
D
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
G S
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
100 75 300 ±20 ±30...
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