SML50C15

SML50C15 TO–254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 VDSS 500V ID(cont) 15A RDS(on) 0.270W 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 3.81 (0.150) BSC Pin 1 – Drain Pin 2 – Source Pin 3 – Gate Faster Switching Lower Leakage 100% Avalanche Tested TO–254 Hermetic Package D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 500 15 60 ±30 ±40 140 2 –55 to 150 300 20 30 960 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction te...