SML901RHN

SML1001RHN SML901RHN0 TO–258 Package Outline. Dimensions in mm (Inches) 17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035) 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D 17.96 (0.707) 17.70 (0.697) 13.84 (0.545) 13.58 (0.535) 1 2 3 4.19 (0.165) 3.94 (0.155) Dia. 19.05 (0.750) 12.70 (0.500) 5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ. 21.21 (0.835) 20.70 (0.815) 3.56 (0.140) BSC G S Pin 1 – Drain Pin 2 – Source Pin 3 – Gate MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 VDSS ID IDM VGS PD TJ , TSTJ TL SML 901RHN 1001RHN 900 1000 10 40 ±30 250 2 –55 to +150°C 300 Unit V A A V W W/°C °C Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Lead Tempeature (0.063” from Case for 10 Sec.) STATIC ELECTRICAL RATINGS (Tcase =25°C unless otherwise stated) Characteristic / Test Conditions / Part Number VGS = 0V BVDSS Drain – Source Breakdown Voltage ID = 250mA IDSS IGSS ID(ON) Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current On State Drain Current 2 VDS = VDSS VDS = 0.8VDSS VGS = ±30V VGS = 10V VDS = VGS ID = 1.0mA VGS = 10V , ID = 0.5 ID [Cont.] TC = 125°C VDS = 0V 10 2 4 1.00 SML1001RHN SML901RHN Min. 1000 900 250 1000 ±100 Typ. Max. Unit V mA nA A V VDS > ID(ON) x RDS(ON) Max VGS(TH) Gate Threshold Voltage RDS(ON) Stat...