SMLA42CSM

SMLA42CSM MECHANICAL DATA Dimensions in mm (inches) SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 0.76 ± 0.15 (0.03 ± 0.006) 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) A 1.40 (0.055) max. FEATURES HIGH BREAKDOWN VOLTAGE LOW SATURATION VOLTAGES LOW CAPACITANCE HERMETIC CERAMIC SURFACE MOUNT PACKAGE SOT23CSM (SOT23 COMPATIBLE) 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Collector PAD 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Tj Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Derate Above 25°C Maximum Junction Temperature Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 300V 300V 6V 500mA 350mW 2.0mW/°C 200°C –55 to 200°C Prelim. 7/94 SMLA42CSM ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) Collector - Base breakdown voltage Collector - Emitter breakdown voltage Emitter - Base breakdown voltage Collector cut-off current Emitter cut-off current Collector - Emitter saturation voltage Base - Emitter saturation voltage DC Current gain Test Conditions IC = 100mA IC...