P-channel With built-in flywheel diode
SLA5006
Absolute maximum ratings
Symbol VDSS VGSS ID ID(pulse) IF IFSM VR PT Ratings –100 20 5 10(PW≤1ms) 5(PW≤0.5ms, Du...
Description
SLA5006
Absolute maximum ratings
Symbol VDSS VGSS ID ID(pulse) IF IFSM VR PT Ratings –100 20 5 10(PW≤1ms) 5(PW≤0.5ms, Du≤25%) 10(PW≤10ms, Single pulse) 120 ± ±
P-channel With built-in flywheel diode
(Ta=25°C)
External dimensions A
SLA
Electrical characteristics
Symbol V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr Specification min typ max –100 500 –250 –2.0 –4.0 0.9 2.0 0.55 0.7 300 200 150 200 –4.5 –5.5 220 Unit V nA µA V S Ω pF pF ns ns V ns
(Ta=25°C)
Unit V V A A A A V W W °C/W °C/W Vrms °C °C
Condition ID=–250µA, VGS=0V VGS= 20V VDS=–100V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–5A VGS=–10V, ID=–5A VDS=–25V, f=1.0MHz, VGS=0V ID=–5A, VDD –50V, VGS=–10V, see Fig. 4 on page 16. ISD=–5A, VGS=0V ISD= 100mA
θ j-a θ j-c VISO Tch Tstg
5 (Ta=25°C, with all circuits operating, without heatsink) 35 (Tc=25°C,with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) 3.57 (Junction-Case, Tc=25°C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 –40 to +150
qDiode for flyback voltage absorption
Symbol VR VF IR trr min 120 Specification typ max 1.0 100 1.2 10 Unit V V µA ns Condition IR=10µA IF=1A VR=120V IF= 100mA
sEquivalent circuit diagram
6 7
1
5
8
12
2
3
4
9
10
11
Characteristic curves
ID-VDS Characteristics (Typical)
---10
–10V
ID-VGS Characteristics (Typical)
---10
RDS(ON)-ID Characteristics (Typical)
1.0
(VDS=–10V)
40°C 25 °C
(VGS=–10V)
TC=–
---8
---8
–7V
...
Similar Datasheet