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SLD1138VL Dataheets PDF



Part Number SLD1138VL
Manufacturers Sony Corporation
Logo Sony Corporation
Description 650nm Multimode Red Laser Diode
Datasheet SLD1138VL DatasheetSLD1138VL Datasheet (PDF)

SLD1138VL 650nm Multimode Red Laser Diode Description The SLD1138VL is a longitudinal multimode red laser diode designed for DVD systems. Features • Low operation current (50mA typ.) • Small package (φ5.6mm) • Longitudinal multimode Applications DVD Structure • AlGaInP MQW laser diode • PIN photodiode to monitor laser beam output Recommended Optical Power Output Absolute Maximum Ratings (Tc = 25°C) • Optical power output Pomax • Reverse voltage VR LD PD • Operating temperature • Storage temperat.

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SLD1138VL 650nm Multimode Red Laser Diode Description The SLD1138VL is a longitudinal multimode red laser diode designed for DVD systems. Features • Low operation current (50mA typ.) • Small package (φ5.6mm) • Longitudinal multimode Applications DVD Structure • AlGaInP MQW laser diode • PIN photodiode to monitor laser beam output Recommended Optical Power Output Absolute Maximum Ratings (Tc = 25°C) • Optical power output Pomax • Reverse voltage VR LD PD • Operating temperature • Storage temperature Topr Tstg 4mW M-274 5 mW V V °C °C 2 15 –10 to +70 –40 to +85 Connection Diagram Pin Configuration 3 PD 2 Common LD 2 1 1 3 1. LD anode 2. PD anode 3. Common Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convery any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E01405-PS SLD1138VL Electrical and Optical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Wavelength Differential efficiency Radiation angle Astigmatism Positional accuracy Monitor current Angle Position Paralell Perpendicular Ith Iop Vop λp ηD θ// θ⊥ As ∆φ// ∆φ⊥ ∆X, ∆Y, ∆Z Imon Po = 4mW, VR = 5V Po = 4mW Po = 4mW Po = 4mW Po = 4mW Po = 4mW Po = 4mW Po = 4mW Symbol Conditions Min. — — — — 0.4 7 25 — — — — 0.05 Typ. 45 50 2.3 655 0.6 8.5 35 12 — — — 0.1 Tc: Case temperature Max. 55 65 2.7 660 0.8 11 40 20 ±2 ±3 ±80 0.3 Unit mA mA V nm mW/mA degree degree µm degree degree µm mA –2– SLD1138VL Notes on Operation Care should be taken for the following points when using this product. (1) This product corresponds to a Class 3B product under IEC60825-1 and JIS standard C6802 "Laser Product Emission Safety Standards". LASER DIODE LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM MAXIMUM OUTPUT WAVELENGTH 30 mW 600 - 950 nm CLASS III b LASER PRODUCT AVOID EXPOSURE Laser radiation is emitted from this aperture. 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan (2) Eye protection against laser beams Take care not to allow laser beams to enter your eyes under any circumstances. For observing laser beams, ALWAYS use safety goggles that block laser beams. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. (3) Gallium Arsenide This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage temperature or higher, or place the product in your mouth. In addition, the following disposal methods are recommended when disposing of this product. 1. Engaging the services of a contra.


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