SLD322V

SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2. ∗1 MOCVD: Metal Organic Chemical Vapor Deposition ∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features High power Recommended optical power output: Po = 0.5W Low operating current: Iop = 0.75A (Po = 0.5W) Applications Solid state laser excitation Medical use Material processes Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25°C) Optical power output Po 0.55 Reverse voltage VR LD 2 PD 15 Operating temperature (Tc) Topr –10 to +30 Storage temperature Tstg –40 to +85 Pin Configuration W V V °C °C 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93205A81-PS SLD322V Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗1 Monitor current Radiation angle (F. W. ...