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SLP-9117E-51

Sanyo Semicon Device

3.1mm red contact type LED lamp (U-cut version)

Ordering number : EN6061 SLP-9117E-51 Infrared LED SLP-9117E-51 ø3.1mm red contact type LED lamp (U-cut version) Fea...


Sanyo Semicon Device

SLP-9117E-51

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Ordering number : EN6061 SLP-9117E-51 Infrared LED SLP-9117E-51 ø3.1mm red contact type LED lamp (U-cut version) Features GaAsP red LED 3.1mmø, U-cut type lamp Light red epoxy resin package type The insertion which made it stick to PCB is possible High luminous intensity, high reliability and long life Application : for the general public welfare 0.8 max 1.55 Note : Material -- lron Coating -- Solder Lead center off : ± 0.4 Unit : mm 2 ø4.4 ø3.1 ø3 2 max (not soldered) .5 R0 4.5 ± 0.5 9.2 ± 0.5 Absolute Maximum Ratings at Ta=25°C (as per JIS C 7032) Parameter Forward Current *1 Pulse Forward Current *2 Reverse Voltage Power Dissipation Operating Temperature Storage Temperature Soldering Temperature *3 *1 *2 *3 Symbol IF IFP VR PD Topr Tstg Tsol Rating 25 100 3 70 -25 to +80 -30 to +85 260 Unit mA mA V mW °C °C °C 0.5 0.4 28.5 ± 1 0.4 Anode Cathode 2.5 Pulse width = Max. 10ms Duty ratio = Max. 1 / 10 Max. 5sec., Lead soldering condition : Min. 1.6mm from case (used 1.6mm’ts PCB) Electrical / Optical Characteristics at Ta=25°C Parameter Symbol Conditions Min. Typ. Foward Voltage VF IF = 20mA 1.7 2.1 Reverse Current IR VR = 3V Luminous Intensity *4 IV IF = 20mA 4.2 8 Peak Wave length λP IF = 20mA 630 Line Half Width ∆λ IF = 20mA 40 Capacitance CO VO = 0 F = 1MHz 40 Response Time t 90 *4 Luminous Intensity is measured by J-16 (SONY TEKTRONIX) of which our office possess. Max. 2.8 10 Unit V µA mcd nm nm pF ns SANYO Electric Co.,Ltd. Semiconduct...




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