SM12G45A

SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current l High Commutating (dv / dt) : IT (RMS) = 12A MAXIMUM RATINGS CHARACTERISTIC SM12G45 SM12G45A SM12J45 SM12J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off−State Voltage V R.M.S On−State Current (Full Sine Waveform Tc = 98°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value (t = 1~10ms) Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 12 120 (50Hz) 132 (60Hz) 72 50 5 0.5 10 2 −40~125 −40~125 A A A s A / µs W W V A °C °C 2 JEDEC JEITA TOSHIBA Weight: 2.0g TO−220AB ― 13−10G1A 1 2001-07-13 SM12G45,SM12J45,SM12G45A,SM12J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I SM12G45 SM12J45 Gate Trigger Voltage SM12G45A SM12J45A II III IV I II III IV I SM12G45 SM12J45 Gate Trigger Current SM12G45A SM12J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage at Commutation SM12G45 SM12J45 SM12G45A SM12J45A VTM VGD IH Rth (j−c) ITM = 17A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A...