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SM130

Formosa MS

Silicon epitaxial planer type

MELF Schottky Barrier Diodes SM120 THRU SM160 Silicon epitaxial planer type Formosa MS SM-1 Features Plastic package ...



SM130

Formosa MS


Octopart Stock #: O-339535

Findchips Stock #: 339535-F

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Description
MELF Schottky Barrier Diodes SM120 THRU SM160 Silicon epitaxial planer type Formosa MS SM-1 Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. .205(5.2) .190(4.8) .024(.60) .018(.46) SOLDERABLE ENDS Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. .105(2.7) .095(2.4) Mechanical data Case : Molded plastic, SM-1 (MELF) Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.015 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 40 1.0 10 Rq JA CJ TSTG -55 50 110 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE - V RRM (V) *1 V RMS (V) 14 21 28 35 42 *2 VR *3 VF *4 Operating temperature ( o C) (V) 20 30 40 50 60 (V) SM120 SM130 SM140 SM150 SM160 20 30 40 50 60 0.55 -55 to +125 *1 Repetitive peak reverse voltage *2 RMS voltage 0.70 -55 to +150 *3 Continuous reverse voltage *4 Maximum forward voltage RAT...




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