SM16G45

SM16G45,SM16J45,SM16G45A,SM16J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G45,SM16J45,SM16G45A,SM16J45A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current l High Commutating (dv / dt) : IT (RMS) = 16A MAXIMUM RATINGS CHARACTERISTIC SM16G45 SM16G45A SM16J45 SM16J45A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off−State Voltage V R.M.S On−State Current (Full Sine Waveform Tc = 100°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range 2 16 150 (50Hz) 165 (60Hz) 112.5 5 0.5 10 2 −40~125 −40~125 A A A s W W V A °C °C 2 JEDEC JEITA TOSHIBA Weight: 2.0g TO−220AB ― 13−10G1A 1 2001-07-10 SM16G45,SM16J45,SM16G45A,SM16J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Commutation Thermal Resistance SM16G45 SM16J45 SM16G45A SM16J45A VTM VGD IH ITM = 25A VD = Rated, Tc = 125°C VD = 12V, ITM = 2A VD = 400V, (di / dt) c = − 8.7A / ms Tj = 125°C Junction to Case, AC IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL ID...