BI-DIRECTIONAL TRIODE THYRISTOR
SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2GZ47,SM2GZ47A,SM2JZ47,...
Description
SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
AC POWER CONTROL APPLICATIONS
l IT (RMS) = 1A (Ta = 65°C without radiator) l Gate Trigger Current l R.M.S On−State Current l Isolation Voltage : IGT = 5mA Max. (TYPE “A”) : IT (RMS) = 2A (Tc = 110°C) : VISOL = 1500V (AC, t = 60s) l Repetitive Peak Off−State Voltage : VDRM = 400V, 600V Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage R.M.S On−State Current (Full Sine Waveform) SM2GZ47 SM2GZ47A SM2JZ47 SM2JZ47A Tc = 110°C Ta = 65°C SYMBOL RATING 400 VDRM 600 IT (RMS) 2 1 8 (50Hz) 8.8 (60Hz) 0.32 3 0.3 10 1.6 −40~125 −40~125 1500 A V UNIT
Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.)
2
ITSM I t PGM PG (AV) VFGM IGM Tj Tstg VISOL
2
A A s W W V A °C °C V
2
JEDEC ― JEITA ― TOSHIBA 13−10H1A Weight: 1.7g (Typ.)
MARKING
NUMBER *1 *2 SYMBOL SM2GZ47, SM2GZ47A TYPE SM2JZ47, SM2JZ47A SM2GZ47A, SM2JZ47A MARK M2GZ47 M2JZ47 A
*3
Example 8A : January 1998 8B : February 1998 8L : December 1998
1
2001-07-10
SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I SM2GZ47 SM2JZ47 Gate Trigger Current SM...
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