Document
Transistors
2.5V Drive Pch MOSFET
RTF010P02
RTF010P02
zStructure Silicon P-channel MOSFET
zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V)
zApplications DC-DC converter
zPackaging specifications
Package
Type
Code Basic ordering unit (pieces)
RTF010P02
Taping TL
3000
zDimensions (Unit : mm)
TUMT3
0.2Max.
(1) Gate (2) Source (3) Drain
Abbreviated symbol : WQ
zEquivalent circuit
(3)
(1) ∗1
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol
VDSS VGSS
ID IDP ∗1 IS ∗1 ISP PD ∗2 Tch Tstg
(2)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Limits −20 ±12 ±1 ±4 −0.4 −4 0.8 150 −55 to +150
Unit V V A A A A W °C °C
zThermal resistance
Parameter Channel to ambient
∗ Mounted on a ceramic board.
Symbol Rth(ch-a) ∗
Limits 156
Unit °C / W
(1) Gate (2) Source (3) Drain
Rev.C
1/4
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
Static drain-source on-state resistance
∗
RDS (on)
− − −
280 390 mΩ ID= −1A, VGS= −4.5V 310 430 mΩ ID= −1A, VGS= −4V 570 800 mΩ ID= −0.5A, VGS= −2.5V
Forward transfer admittance
Yfs ∗ 0.7
−
−
S VDS= −10V, ID= −0.5A
Input capacitance
Ciss
− 150 −
pF VDS= −10V
Output capacitance
Coss − 20 − pF VGS=0V
Reverse transfer capacitance Crss
− 20 − pF f=1MHz
Turn-on delay time
td (on) ∗
−
9
− ns ID= −0.5A
Rise time Turn-off delay time Fall time
tr ∗ td (off) ∗
− −
8 25
− −
ns VDD −15V VGS= −4.5V
ns RL=30Ω
tf ∗ − 10 − ns RG=10Ω
Total gate charge
Qg ∗ − 2.1 − nC VDD −15V RL=15Ω
Gate-source charge
Qgs ∗ − 0.5 − nC VGS= −4.5V RG=10Ω
Gate-drain charge
Qgd ∗ − 0.5 − nC ID= −1A
∗Pulsed
zBody diode characteristics (Source -drain) (Ta=25°C)
Parameter Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −0.4A, VGS=0V
RTF010P02
Rev.C
2/4
DRAIN CURRENT : −ID (A)
Transistors
zElectrical characteristic curves
10 VDS= −10V Pulsed
1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
0.1
0.01
0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 GATE-SOURCE VOLTAGE : −VGS (V)
Fig.1 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
10000
VGS= −2.5V 1000 VGS= −4.0V
VGS= −4.5V
Ta=25°C Pulsed
100 0.01
0.1 1 DRAIN CURRENT : −ID (A)
10
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
RTF010P02
10000
Ta=125°C Ta=75°C 1000 Ta=25°C Ta= −25°C
VGS= .