DatasheetsPDF.com

RTF010P02 Dataheets PDF



Part Number RTF010P02
Manufacturers Rohm
Logo Rohm
Description P-Channel MOSFET
Datasheet RTF010P02 DatasheetRTF010P02 Datasheet (PDF)

Transistors 2.5V Drive Pch MOSFET RTF010P02 RTF010P02 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) zApplications DC-DC converter zPackaging specifications Package Type Code Basic ordering unit (pieces) RTF010P02 Taping TL 3000 zDimensions (Unit : mm) TUMT3 0.2Max. (1) Gate (2) Source (3) Drain Abbreviated symbol : WQ zEquivalent circuit (3) (1) ∗1 ∗2 zAbsolute max.

  RTF010P02   RTF010P02



Document
Transistors 2.5V Drive Pch MOSFET RTF010P02 RTF010P02 zStructure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. (570mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) zApplications DC-DC converter zPackaging specifications Package Type Code Basic ordering unit (pieces) RTF010P02 Taping TL 3000 zDimensions (Unit : mm) TUMT3 0.2Max. (1) Gate (2) Source (3) Drain Abbreviated symbol : WQ zEquivalent circuit (3) (1) ∗1 ∗2 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ∗1 ISP PD ∗2 Tch Tstg (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Limits −20 ±12 ±1 ±4 −0.4 −4 0.8 150 −55 to +150 Unit V V A A A A W °C °C zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth(ch-a) ∗ Limits 156 Unit °C / W (1) Gate (2) Source (3) Drain Rev.C 1/4 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±12V, VDS=0V Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −20V, VGS=0V Gate threshold voltage VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA Static drain-source on-state resistance ∗ RDS (on) − − − 280 390 mΩ ID= −1A, VGS= −4.5V 310 430 mΩ ID= −1A, VGS= −4V 570 800 mΩ ID= −0.5A, VGS= −2.5V Forward transfer admittance Yfs ∗ 0.7 − − S VDS= −10V, ID= −0.5A Input capacitance Ciss − 150 − pF VDS= −10V Output capacitance Coss − 20 − pF VGS=0V Reverse transfer capacitance Crss − 20 − pF f=1MHz Turn-on delay time td (on) ∗ − 9 − ns ID= −0.5A Rise time Turn-off delay time Fall time tr ∗ td (off) ∗ − − 8 25 − − ns VDD −15V VGS= −4.5V ns RL=30Ω tf ∗ − 10 − ns RG=10Ω Total gate charge Qg ∗ − 2.1 − nC VDD −15V RL=15Ω Gate-source charge Qgs ∗ − 0.5 − nC VGS= −4.5V RG=10Ω Gate-drain charge Qgd ∗ − 0.5 − nC ID= −1A ∗Pulsed zBody diode characteristics (Source -drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit Conditions VSD − − −1.2 V IS= −0.4A, VGS=0V RTF010P02 Rev.C 2/4 DRAIN CURRENT : −ID (A) Transistors zElectrical characteristic curves 10 VDS= −10V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 GATE-SOURCE VOLTAGE : −VGS (V) Fig.1 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10000 VGS= −2.5V 1000 VGS= −4.0V VGS= −4.5V Ta=25°C Pulsed 100 0.01 0.1 1 DRAIN CURRENT : −ID (A) 10 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) RTF010P02 10000 Ta=125°C Ta=75°C 1000 Ta=25°C Ta= −25°C VGS= .


RTE44024 RTF010P02 RTF015P02


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)