RTQ035P02
Transistor
DC-DC Converter (−20V, −3.5A)
RTQ035P02
zFeatures 1) Low On-resistance.(80mΩ at 2.5V) 2) High Powe...
RTQ035P02
Transistor
DC-DC Converter (−20V, −3.5A)
RTQ035P02
zFeatures 1) Low On-resistance.(80mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) zExternal dimensions (Units : mm)
TSMT6
2.8 1.6
(3) (2) (1) (4) (5) (6)
0.16
0.4
Each lead has same dimensions
Abbreviatedsymbol : TL
zApplications DC-DC converter
zStructure Silicon P-channel MOSFET
zEquivalent circuit
(6) (5) (4)
zPackaging specifications
Package Type Code Basic ordering unit (pieces) RTQ035P02
(1) (2)
∗2
Taping TR 3000
∗1 (1)DRAIN (2)DRAIN (3)GATE (4)SOURCE (5)DRAIN (6)DRAIN
0.85
(3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
2.9
1/4
RTQ035P02
Transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain−source voltage Gate−source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature
<1% <10µs, Duty cycle = ∗1 Pw = ∗2 Mounted on a ceramic board
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg
Limits −20 ±12 ±3.5 ±17.5 −1 −4 1.25 150 −55~+150
Unit V V A A A A °C °C
∗1 ∗1
W ∗2
zElectrical characteristics (Ta=25°C)
Parameter Gate-source leakage Symbol IGSS Min. − −20 − −0.7 − − − Yfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
∗ ∗ ∗ ∗ ∗
Typ. − − − − 50 55 80 − 1200 200 130 16 40 55 30 10.5 2.0 3.5
Max. ±10 − −1 −2.0 65 70 100 − − − − − − − − − − −
Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC ID=−2A VDD −15V VGS=−4.5V RL=7.5Ω RGS=10Ω VDD −15V VGS=−4...