Document
RTR025P02
Transistors
Switching (−20V, −2.5A)
RTR025P02
zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). zExternal dimensions (Unit : mm)
TSMT3
0.3~0.6
0~0.1
(1) Gate (2) Source (3) Drain
2.9±0.1
0.1 0.4 + −0.05 same dimensions
Each lead has
1.0MAX.
0.85±0.1 0.7±0.1
(3)
2.8±0.2
zApplication Power switching, DC / DC converter.
0.2 1.6 + −0.1
(1)
0.95 0.95 1.9±0.2
(2)
0.1 0.16 + −0.06
zStructure Silicon P-channel MOS FET
zPackaging specifications
Package Type RTR025P02 Code Basic ordering unit (pieces) Taping TL 3000
Each lead has same dimensions
Abbreviated symbol : TY
zEquivalent circuit
(3)
(1)
∗2 ∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits −20 ±12 ±2.5 ±10 −0.8 −3.2 1.0 150 −55 to +150
Unit V V A A A A W °C °C
(2)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
zThermal resistance (Ta=25°C)
Parameter Channel to ambient Symbol Rth (ch-A) Limits 125 Unit °C / W
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RTR025P02
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − VGS (th) −0.7 Gate threshold voltage − Static drain-source on-state RDS (on) ∗ − resistance − Yfs ∗ 2.3 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Total gate charge Qg − Gate-source charge Qgs Gate-drain charge Qgd −
∗Pulsed
Typ. − − − − 70 75 115 − 630 110 75 12 18 50 20 7 1.5 2.0
Max. ±10 − −1 −2.0 95 105 160 − − − − − − − − − − −
Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2.5A, VGS= −4.5V ID= −2.5A, VGS= −4.0V ID= −1.25A, VGS= −2.5V VDS= −10V, ID= −1.2A VDS= −10V VGS=0V f=1MHz ID= −1.25A VDD −15V VGS= −4.5V RL=12Ω RGS=10Ω VDD −15V VGS= −4.5V ID= −2.5A
Body diode characteristics (source-drain characteristics) VSD Forward voltage − − −1.2
V
IS= −0.8A, VGS=0V
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RTR025P02
Transistors
zElectrical characteristic curves
VDS= −10V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=25°C Pulsed
VGS= −2.5V VGS= −4.0V VGS= −4.5V
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
10
1000
1000
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
VGS= −4.5V Pulsed
DRAIN CURRENT : −ID (A)
1
0.1
0.01
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
100
100
0.001 0.5
1.0
1.5
2.0
2.5
1 0.01
0.1
1
10
10 0.1
1
10
GATE-SOURCE VOLTAGE : −VGS (V)
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
REVERSE DRAIN CURRENT : −IDR (A)
1000
VGS= −4V Pulsed
1000
VGS= −2.5V Pulsed
10
VGS=0V Pulsed
1
100
100
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
0.1
10 0.1
1
10
10 0.1
1
10
0.01
0
0.5
1.0
1.5
2.0
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Reverse Drain Current vs.Source-Drain Voltage
10000
GATE-SOURCE VOLTAGE : −VGS (V)
SWITCHING TIME : t (ns)
Ta=25°C f=1MHz VGS=0V
10000
CAPACITANCE : C (pF)
1000
1000
Ciss
Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5
Ta=25°C VDD= −15V ID= −2.5A RG=10Ω Pulsed
tf
100
td (off) td (on)
10
100
Coss Crss
tr
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
6
7
6
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
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RTR025P02
Transistors
zMeasurement circuits
VGS
ID RL D.U.T.
VDS
VGS
10% 90% 90% 90% 10% td(off) toff tr
RG VDD
VDS td(on) ton 10% tr
Fig.10 Switching Time Test Circuit
Fig.11 Switching Time Waveforms
VG
VGS ID RL IG (Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
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Appendix
Notes
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