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RTR025P02 Dataheets PDF



Part Number RTR025P02
Manufacturers Rohm
Logo Rohm
Description Switching (20V/ 2.5A)
Datasheet RTR025P02 DatasheetRTR025P02 Datasheet (PDF)

RTR025P02 Transistors Switching (−20V, −2.5A) RTR025P02 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). zExternal dimensions (Unit : mm) TSMT3 0.3~0.6 0~0.1 (1) Gate (2) Source (3) Drain 2.9±0.1 0.1 0.4 + −0.05 same dimensions Each lead has 1.0MAX. 0.85±0.1 0.7±0.1 (3) 2.8±0.2 zApplication Power switching, DC / DC converter. 0.2 1.6 + −0.1 (1) 0.95 0.95 1.9±0.2 (2) 0.1 0.16 + −0.06 zStructure Silicon P-channel MOS FET zPacka.

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RTR025P02 Transistors Switching (−20V, −2.5A) RTR025P02 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). zExternal dimensions (Unit : mm) TSMT3 0.3~0.6 0~0.1 (1) Gate (2) Source (3) Drain 2.9±0.1 0.1 0.4 + −0.05 same dimensions Each lead has 1.0MAX. 0.85±0.1 0.7±0.1 (3) 2.8±0.2 zApplication Power switching, DC / DC converter. 0.2 1.6 + −0.1 (1) 0.95 0.95 1.9±0.2 (2) 0.1 0.16 + −0.06 zStructure Silicon P-channel MOS FET zPackaging specifications Package Type RTR025P02 Code Basic ordering unit (pieces) Taping TL 3000 Each lead has same dimensions Abbreviated symbol : TY zEquivalent circuit (3) (1) ∗2 ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −20 ±12 ±2.5 ±10 −0.8 −3.2 1.0 150 −55 to +150 Unit V V A A A A W °C °C (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zThermal resistance (Ta=25°C) Parameter Channel to ambient Symbol Rth (ch-A) Limits 125 Unit °C / W 1/4 RTR025P02 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − VGS (th) −0.7 Gate threshold voltage − Static drain-source on-state RDS (on) ∗ − resistance − Yfs ∗ 2.3 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Total gate charge Qg − Gate-source charge Qgs Gate-drain charge Qgd − ∗Pulsed Typ. − − − − 70 75 115 − 630 110 75 12 18 50 20 7 1.5 2.0 Max. ±10 − −1 −2.0 95 105 160 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2.5A, VGS= −4.5V ID= −2.5A, VGS= −4.0V ID= −1.25A, VGS= −2.5V VDS= −10V, ID= −1.2A VDS= −10V VGS=0V f=1MHz ID= −1.25A VDD −15V VGS= −4.5V RL=12Ω RGS=10Ω VDD −15V VGS= −4.5V ID= −2.5A Body diode characteristics (source-drain characteristics) VSD Forward voltage − − −1.2 V IS= −0.8A, VGS=0V 2/4 RTR025P02 Transistors zElectrical characteristic curves VDS= −10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=25°C Pulsed VGS= −2.5V VGS= −4.0V VGS= −4.5V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS= −4.5V Pulsed DRAIN CURRENT : −ID (A) 1 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 100 0.001 0.5 1.0 1.5 2.0 2.5 1 0.01 0.1 1 10 10 0.1 1 10 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Ta=125°C Ta=75°C Ta=25°C Ta= −25°C REVERSE DRAIN CURRENT : −IDR (A) 1000 VGS= −4V Pulsed 1000 VGS= −2.5V Pulsed 10 VGS=0V Pulsed 1 100 100 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 10 0.1 1 10 10 0.1 1 10 0.01 0 0.5 1.0 1.5 2.0 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Reverse Drain Current vs.Source-Drain Voltage 10000 GATE-SOURCE VOLTAGE : −VGS (V) SWITCHING TIME : t (ns) Ta=25°C f=1MHz VGS=0V 10000 CAPACITANCE : C (pF) 1000 1000 Ciss Ta=25°C VDD= −15V VGS= −4.5V RG=10Ω Pulsed 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 Ta=25°C VDD= −15V ID= −2.5A RG=10Ω Pulsed tf 100 td (off) td (on) 10 100 Coss Crss tr 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 6 7 6 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RTR025P02 Transistors zMeasurement circuits VGS ID RL D.U.T. VDS VGS 10% 90% 90% 90% 10% td(off) toff tr RG VDD VDS td(on) ton 10% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for.


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