Preliminary Information. PA2423G Datasheet

PA2423G Information. Datasheet pdf. Equivalent

Part PA2423G
Description 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Feature PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetootht.
Manufacture SiGe Semiconductor Inc.
Datasheet
Download PA2423G Datasheet



PA2423G
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Flip chip and chip-on-board applications
Features
+22.5 dBm at 47% Power Added Efficiency
Low current 80 mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
-40C to +85C temperature range
Gold bump bare die (0.63mm x 0.96mm)
Ordering Information
Part
PA2423G
PA2423G-EV
Package
Gold bump bare
die
Evaluation kit
Shipping
Method
Diced wafer
Waffle pack
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423G is designed for
Class 1 Bluetoothtm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 47% power-
added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
Class 1 Bluetoothtm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit corrects the turn-on/off
switching of amplifier output with less than 3 dB
overshoot, meeting the Bluetoothtm specification 1.1.
The PA2423G operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 120 mA.
The silicon/silicon-germanium structure of the
PA2423G provides high thermal conductivity and
a subsequently low junction temperature. This
device is capable of operating at a duty cycle of
100 percent.
Functional Block Diagram
IN
Stage 1
GND
VCTL
Bias Generator
Interstage
Match
VCC1
VCC0 VRAMP
Ramp
Circuitry
Stage 2
OUT/ VCC2
GND
DOC # 05PDS003 Rev 5
07/26/2001
Page 1



PA2423G
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Pad Description
For reference of pad numbers to the package drawings, see pages 4 and 5.
Number
Name
Description
Pad Coordinate, Center of Pad
(lower left corner is (0.0))
1 IN PA input
X = 192µm ± 10µm, Y = 315µm ± 10µm
2 VRAMP PA enable/disable control input
X = 192µm ± 10µm, Y = 515µm ± 10µm
3
GND1
Ground
X = 352µm ± 10µm, Y = 515µm ± 10µm
4
VCTL
Output power level control
X = 512µm ± 10µm, Y = 515µm ± 10µm
5
GND2
Ground
X = 672µm ± 10µm, Y = 515µm ± 10µm
6
GND3
Ground
X = 832µm ± 10µm, Y = 515µm ± 10µm
7 OUT/VCC2 PA output and stage2 collector supply voltage X = 752µm ± 10µm, Y = 315µm ± 10µm
8
GND4
Ground
X = 832µm ± 10µm, Y = 115µm ± 10µm
9
GND5
Ground
X = 672µm ± 10µm, Y = 115µm ± 10µm
10
VCC1
Stage1 collector supply voltage
X = 512µm ± 10µm, Y = 115µm ± 10µm
11
GND6
Ground
X = 352µm ± 10µm, Y = 115µm ± 10µm
12
VCC0
Ramp supply voltage
X = 192µm ± 10µm, Y = 115µm ± 10µm
Absolute Maximum Ratings
Symbol
Parameter
VCC
VCTL
VRAMP
IN
TA
TSTG
Tj
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Min.
-0.3
-0.3
-0.3
-40
-40
Max.
+3.6
VCC
VCC
+8
+85
+150
+150
Unit
V
V
V
dBm
°C
°C
°C
Operation in excess of any one of the above Absolute Maximum Ratings may result in permanent damage. This device is a
high performance RF integrated circuit with EST rating < 600V and is ESD sensitive. Handling and assembly of this device
should be at ESD protected workstations.
DOC # 05PDS003 Rev 5
07/26/2001
Page 2





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