PA2423G

PA2423G 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Flip chip and chip-on-board applications Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 47% poweradded efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in tm Class 1 Bluetooth applications. The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit corrects the turn-on/off switching of amplifier output with less than 3 dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423G operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 120 mA. Shipping Method Diced wafer Waffle pack The silicon/silicon-germanium structure of the PA2423G provides high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. Features +22.5 dBm at 47% Power Added Efficiency Low current 80 mA typical @ Pout=+20 dBm Temperature stability better than 1dB Power-control and Power-down modes -40C to +85C temperature range Gold bump bare die (0.63mm x 0...