Preliminary Information. PA2423L Datasheet

PA2423L Information. Datasheet pdf. Equivalent

Part PA2423L
Description 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
Feature PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetooth.
Manufacture SiGe Semiconductor Inc.
Total Page 11 Pages
Datasheet
Download PA2423L Datasheet



PA2423L
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.5dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature rating: -40C to +85C
Very small plastic package - 6 lead LPCC
(1.6mm x 3.0mm)
Ordering Information
Type
PA2423L
Package
6 - LPCC
PA2423L-EV Evaluation kit
Shipping
Method
Tape and reel
Tubes -samples
Functional Block Diagram
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423L is designed for
class 1 Bluetoothtm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 45%
power-added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
class 1 Bluetoothtm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetoothtm
specification 1.1.
The PA2423L operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423L – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
IN
Stage 1
GND
VCTL
Bias Generator
Interstage
Match
VCC1
VCC0 VRAMP
Ramp
Circuitry
Stage 2
OUT/ VCC2
GND
DOC# 05PDS002 Rev 4
07/26/2001
Page 1 of 11



PA2423L
PA2423L
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Pin Out Diagram
TOP VIEW
1 SiGe 6
2 2423L 5
34
BOTTOM VIEW
66
5 Die
4
1
2
3
Pin Out Description
Pin No.
1
2
3
4
5
6
Die Pad
Name
VCTL
VRAMP
IN
VCCO
VCC1
OUT/VCC2
GND
Description
Controls the output level of the power amplifier. An analog control signal between
0V and Vcc varies the PA output power between minimum and maximum values
Enable/Disable the power amplifier. A digital control signal with Vcc logic high
(power up) and 0V logic low (power down) is used to turn the device on and off.
Power amplifier RF input, external input matching network with DC blocking is
required
Bias supply voltage
Stage 1 collector supply voltage, external inter-stage matching network is required
PA Output and Stage2 collector supply voltage, external output matching network
with DC blocking is required
Heatslug Die Pad is ground
DOC# 05PDS002 Rev 4
07/26/2001
Page 2 of 11





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