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RU2B

EIC discrete Semiconductors

FAST RECOVERY RECTIFIER DIODES

RU2 - RU2Z PRV : 200 - 800 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capab...


EIC discrete Semiconductors

RU2B

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RU2 - RU2Z PRV : 200 - 800 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Forward Current Ta = 50 °C Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sine wave, Single Shot ) Maximum Forward Voltage at IF = 1 Amp. Maximum Reverse Current at VR = VRM Maximum Reverse Current at VR = VRM Maximum Reverse Recovery Time (Note 1) Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL VRM VRSM IF(AV) IFSM VF IR IR(H) Trr TJ TSTG RU2Z 200 250 RU2 600 650 1.0 20 1.5 10 300 400 - 40 to + 150 - 40 to + 150 RU2B 800 850 UNIT V V A A V µA µA ns °C °C Notes : ( 1 ) Reverse Re...




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