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RU2YX

EIC discrete Semiconductors

FAST RECOVERY RECTIFIER DIODE

RU2YX PRV : 100 Volts Io : 1.5 Amperes FEATURES : * * * * * * High current capability High surge current capability High...


EIC discrete Semiconductors

RU2YX

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RU2YX PRV : 100 Volts Io : 1.5 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY RECTIFIER DIODE D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sinewave, Single Shot ) Maximum Forward Voltage at IF = 1.2 A Maximum Reverse Current at VR = VRM Maximum Reverse Current at VR = VRM Maximum Reverse Recovery Time ( Note 1) Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL VRM VRSM IF(AV) IFSM VF IR IR(H) Trr TJ TSTG VALUE 100 100 1.5 30 0.95 10 300 200 - 40 to + 150 - 40 to + 150 UNIT V V A A V µA µA ns °C °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 10 mA, IRP = 10 mA...




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