Avalanche Diodes with built-in Thyristor
Avalanche Diodes with built-in Thyristor
Absolute Maximum Ratings Parameter Type No. VRDC (V) (–10ºC) ITSM (A)
50Hz Half...
Description
Avalanche Diodes with built-in Thyristor
Absolute Maximum Ratings Parameter Type No. VRDC (V) (–10ºC) ITSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) VZ (V) IR (µA) VR = VRM max IR (H) (µA) VR = VRM Ta =100°C max
Others
Tj (°C)
(typ.)
Mass Fig. (g)
RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 RZ1175 RZ1200 EZ0150
20 28 40
27 to 33 34 to 40 50 to 60 60 to 70 30 –10 to +125 –40 to +150 90 to 110 115 to 135 140 to 160 165 to 185 185 to 215 140 to 160
0.03 0.05 0.07 0.44 10 50 0.18 0.22 0.30 0.18 0.2
B A
* * *
50 80 105 125 150 180 125
*
DC reverse blocking voltage VR (DC) (V)
Under development
RZ1030
22
RZ1040
50
Reverse breakdown voltage VZ (V)
VR(DC) Temperature characteristic
VZ Temperature dependence
DC reverse blocking voltage VR(DC) (V)
30
VR(DC) Temperature characteristic
Reverse breakdown voltage VZ (V)
55 50 45 40 38 35 30 28 25
VZ Temperature dependence
21
45 40 35 31.9 30 25.9 25 22 20 –10 0 max min 36
29
max
20
28
min
19
30
27
VRDC Temperature characteristic
18
VRDC Temperature characteristic
26
–10 0
25
50
75
100
125
25
50
75
100
125
–10 0
25
50
75
100
125
–10 0
25
50
75
100
125
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
RZ1055
45
DC reverse blocking voltage VR (DC) (V)
RZ1065
70
Reverse breakdown voltage VZ (V)
VR(DC) Temperature characteristic
VZ Temperature dependence
67 max
65 6...
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