PIN diode
RN739F / RN739D
Diodes
PIN diode
RN739F / RN739D
!Applications VHF / UHF band variable attenuators and AGC !External di...
Description
RN739F / RN739D
Diodes
PIN diode
RN739F / RN739D
!Applications VHF / UHF band variable attenuators and AGC !External dimensions (Units : mm)
RN739F
2.0±0.2 1.3±0.1 0.9±0.1 0.3 0.6
0.3±0.1
0.15±0.05
(All pins have the same dimensions)
ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323
RN739D
2.9±0.2 1.9±0.2 0.95 0.95 0.2 1.1 + −0.1 0.8±0.1
!Construction Silicon diffusion junction
0.2 1.6 + −0.1
2.8±0.2
!Circuit
0.1Min.
0~0.1
(All pins have the same dimensions)
ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346
!Absolute maximum ratings (Ta = 25°C)
Parameter DC reverse voltage DC forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Limits 50 50 100 125 −55~+125 Unit V mA mW °C °C
!Electrical characteristics (Ta = 25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Forward operating resistance Symbol VF IR CT rF Min. − − − − Typ. − − − − Max. 1.0 100 0.4 7 Unit V nA pF Ω IF=50mA VR=50V VR=35V, f=1MHz IF=10mA, f=100MHz Conditions
0.3~0.6
D5F
5F
!Features 1) Multiple diodes in one small surface mount package. (UMD3, SMD3) 2) Low high-frequency forward resistance (rF) / low capacitance (CT). 3) High reliability.
0.65
0.65
1.25±0.1
2.1±0.1
0~0.1
+0.1 0.4 − 0.05
+0.1 0.15 − 0.06
RN739F / RN739D
Diodes
!Electrical characteristic curves (Ta = 25°C)
CAPACITANCE BETWEEN TERMINAL : CT (pF)
10µ
100m
125°C
1.0 0.7 0.5 0.4 0.3
f=1MHz
1µ
REVERSE CURRENT : IR (A)
25°C
FORWARD CURRENT : IF (A)
125°C
75°C
100n 1...
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