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RLP1N06CLE Dataheets PDF



Part Number RLP1N06CLE
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel Power MOSFET
Datasheet RLP1N06CLE DatasheetRLP1N06CLE Datasheet (PDF)

RLP1N06CLE Data Sheet July 1999 File Number 2839.4 1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET The RLP1N06CLE is an intelligent monolithic power circuit which incorporates a lateral bipolar transistor, resistors, zener diodes, and a PowerMOS transistor. The current limiting of this device allows it to be used safely in circuits where it is anticipated that a shorted load condition may be encountered. The drain to source voltage clamping offers precision control .

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RLP1N06CLE Data Sheet July 1999 File Number 2839.4 1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET The RLP1N06CLE is an intelligent monolithic power circuit which incorporates a lateral bipolar transistor, resistors, zener diodes, and a PowerMOS transistor. The current limiting of this device allows it to be used safely in circuits where it is anticipated that a shorted load condition may be encountered. The drain to source voltage clamping offers precision control of the circuit voltage when switching inductive loads. Logic level gates allow this device to be fully biased on with only 5V from gate to source. Input protection is provided for ESD up to 2kV. Formerly developmental type TA09880. Features • 1A, 55V • rDS(ON) = 0.750Ω • ILIMIT at 150oC = 1.1A to 1.5A Maximum • Built-in Voltage Clamp • Built-in Current Limiting • ESD Protected, 2kV Minimum • Controlled Switching Limits EMI and RFI • 175oC Rated Junction Temperature • Logic Level Gate • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RLP1N06CLE PACKAGE TO-220AB BRAND L1N06CLE Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-428 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RLP1N06CLE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RLP1N06CLE 55 55 2 Self Limited 5.5 36 0.24 -55 to 175 300 260 UNITS V V kV V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Drain to Gate Voltage (RGS = 20kΩ, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Electrostatic Voltage at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) IDS(LIM) t(ON) td(ON) tr td(OFF) tf t(OFF) RθJC RθJA ESD TO-220AA Human Model (100pF, 1.5kΩ) MIL-STD-883B (Category B2) TEST CONDITIONS ID = 20mA, VGS = 0V (Figure 7) VGS = VDS, ID = 250µA (Figure 8) VDS = 45V, VGS = 0V VGS = 5V ID = 1A, VGS = 5V (Figure 6) VDS = 15V, VGS = 5V (Figure 2) TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 55 1 1.8 0.9 1 1 2000 TYP MAX 70 2.5 5 20 5 20 0.750 1.500 3 1.5 6.5 1.5 5 7.5 5 12.5 4.17 62 UNITS V V µA µA µA µA Ω Ω A A µs µs µs µs µs µs oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Limiting Current Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Electrostatic Voltage VDD = 30V, ID = 1A, VGS = 5V, RGS = 25Ω RL = 30Ω V Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 80µs maximum, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 1A ISD = 1A TEST CONDITIONS MIN TYP MAX 1.5 1 UNITS V ms 6-429 RLP1N06CLE Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 NORMALIZED DRAIN CURRENT Unless Otherwise Specified 2.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 10V, VGS = 5V 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 FIGURE 1. NORMALIZED POWER .


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