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RM10B

EIC discrete Semiconductors

SILICON RECTIFIER DIODES

RM10 - RM10Z PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * High current capability High surge curren...


EIC discrete Semiconductors

RM10B

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Description
RM10 - RM10Z PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF RM10Z 200 140 200 1.5 RM10 400 280 400 RM10A 600 420 600 1.2 RM10B 800 560 800 UNIT Volts Volts Volts Amps. IFSM VF IR IR(H) CJ RθJA TJ TSTG 120 0.91 10 50 30 50 150 Amps. Volts µA µA pF °C/W °C °C Typical Junction Capacitance (Note1)...




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