SILICON RECTIFIER DIODES
RM10 - RM10Z
PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes
FEATURES :
* * * * * High current capability High surge curren...
Description
RM10 - RM10Z
PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes
FEATURES :
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIFIER DIODES D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0.284 (7.20) 0.268 (6.84)
MECHANICAL DATA :
* Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram
0.034 (0.86) 0.028 (0.71)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C
SYMBOL
VRRM VRMS VDC IF
RM10Z
200 140 200 1.5
RM10
400 280 400
RM10A
600 420 600 1.2
RM10B
800 560 800
UNIT
Volts Volts Volts Amps.
IFSM VF IR IR(H) CJ RθJA TJ TSTG
120 0.91 10 50 30 50
150
Amps. Volts µA µA pF °C/W °C °C
Typical Junction Capacitance (Note1)...
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